| 000 | 04089nlm1a2200397 4500 | ||
|---|---|---|---|
| 001 | 641038 | ||
| 005 | 20231030040415.0 | ||
| 035 | _a(RuTPU)RU\TPU\network\5916 | ||
| 035 | _aRU\TPU\network\5915 | ||
| 090 | _a641038 | ||
| 100 | _a20150507a2012 k y0rusy50 ca | ||
| 101 | 0 |
_aeng _drus _deng |
|
| 102 | _aRU | ||
| 135 | _adrgn ---uucaa | ||
| 181 | 0 | _ai | |
| 182 | 0 | _ab | |
| 200 | 1 |
_aOptical spectroscopy of alkaline-earth metal fluoride crystals under cascade and simultaneous pulsed excitation _fE. P. Chinkov, V. F. Shtanko (Shtan'ko), S. A. Stepanov |
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| 203 |
_aText _celectronic |
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| 300 | _aЗаглавие с экрана | ||
| 320 | _a[Библиогр.: с. 38 (9 назв.)] | ||
| 330 | _aOptical spectroscopy with nanosecond resolution is used to study the spectral and kinetic characteristic of the optical absorption and luminescence in CaF 2, SrF 2, and BaF 2 crystals under pulsed electron beam excitation. The crystals were simultaneously irradiated by stimulated emission of A 2B 6semiconductors. This additional excitation occurred in the region of the electron component of the self-trapped excitons (STE) absorption. It was stated that STE creation effectiveness in CaF 2, SrF 2, and BaF2 crystals decreased under irradiation with stimulated emission of semiconductors. An evidence for this statement was selective decrease in absorption spectrum of STE and in luminescence spectrum due to their radiative annihilation. Under simultaneous irradiation of CaF 2, SrF 2, and BaF 2 crystals by stimulated emission of semiconductors we observed fast decaying emission at the high-energy edge of emission bands attributed to STE radiative annihilation. The decay time of this emission was shorter than resolution of the measurement technique (< 7 ns). The spectral and kinetic parameters of this fast emission appeared in BaF 2 crystal under pulsed electron excitation and simultaneous irradiation by CdSe stimulated emission were close to those of core-valent electron transitions. Fast emission in the ultra-violet spectral region of CaF 2, SrF 2, and BaF 2 crystals emission spectrum was attributed to radiative electron transitions from higher excited or precursor states. | ||
| 333 | _aРежим доступа: по договору с организацией-держателем ресурса | ||
| 461 |
_tИзвестия вузов. Физика _oнаучный журнал _d1957- |
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| 463 |
_tТ. 55, № 11/3 _v[С. 34-38] _d2012 |
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| 610 | 1 | _aэлектронный ресурс | |
| 610 | 1 | _aтруды учёных ТПУ | |
| 610 | 1 | _aspectroscopy | |
| 610 | 1 | _aelectron excitation | |
| 700 | 1 |
_aChinkov _bE. P. _cspecialist in the field of material science _cAssociate Professor of Tomsk Polytechnic University, Candidate of physical and mathematical sciences _f1952- _gEvgeny Petrovich _2stltpush _3(RuTPU)RU\TPU\pers\33752 |
|
| 701 | 1 |
_aShtanko (Shtan'ko) _bV. F. _cphysicist _cProfessor of Tomsk Polytechnic University, Doctor of physical and mathematical sciences _f1948- _gViktor Fedorovich _2stltpush _3(RuTPU)RU\TPU\pers\33770 |
|
| 701 | 1 |
_aStepanov _bS. A. _cspecialist in the field of lightning engineering _cEngineer of Tomsk Polytechnic University _f1986- _gSergey Aleksandrovich _2stltpush _3(RuTPU)RU\TPU\pers\33771 |
|
| 712 | 0 | 2 |
_aНациональный исследовательский Томский политехнический университет (ТПУ) _bИнститут физики высоких технологий (ИФВТ) _bКафедра лазерной и световой техники (ЛиСТ) _h65 _2stltpush _3(RuTPU)RU\TPU\col\18690 |
| 712 | 0 | 2 |
_aНациональный исследовательский Томский политехнический университет (ТПУ) _bИнститут физики высоких технологий (ИФВТ) _bКафедра материаловедения и технологии металлов (МТМ) _h73 _2stltpush _3(RuTPU)RU\TPU\col\18689 |
| 801 | 2 |
_aRU _b63413507 _c20150614 _gRCR |
|
| 856 | 4 | _uhttp://elibrary.ru/item.asp?id=19015546 | |
| 942 | _cCF | ||