| 000 | 03243nlm1a2200385 4500 | ||
|---|---|---|---|
| 001 | 641047 | ||
| 005 | 20231030040416.0 | ||
| 035 | _a(RuTPU)RU\TPU\network\5925 | ||
| 090 | _a641047 | ||
| 100 | _a20150507a2015 k y0engy50 ba | ||
| 101 | 0 | _aeng | |
| 135 | _adrcn ---uucaa | ||
| 181 | 0 | _ai | |
| 182 | 0 | _ab | |
| 200 | 1 |
_aPositron spectroscopy of defects in submicrocrystalline nickel after low-temperature annealing _fP. V. Kuznetsov [et al.] |
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| 203 |
_aText _celectronic |
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| 300 | _aTitle screen | ||
| 320 | _a[References: p. 228 (36 tit.)] | ||
| 330 | _aUsing the method of measuring the positron lifetime spectra and Doppler broadening annihilation line spectroscopy, the annealing of defects in submicrocrystalline nickel produced by equal channel angular pressing has been studied. In as-prepared samples, the positrons are trapped by dislocation defects and vacancy complexes inside crystallites. The size of vacancy complexes decreases with increasing annealing temperature in the interval deltaT = 20–300°C. However, at T = 360°C, the complexes start growing again. The dependence of S-parameter on W-parameter derived from the Doppler broadening spectroscopy has two parts with different inclinations to axes that correspond to different types of primary centers of positron trapping in submicrocrystalline nickel. It has been elucidated that, at recovery stage in the temperature interval deltaT = 20–180°C, the main centers of positron trapping are low-angle boundaries enriched by impurities, while at in situ recrystallization stage in the temperature interval deltaT = 180–360°C, the primary centers of positron trapping are low-angle boundaries. | ||
| 333 | _aРежим доступа: по договору с организацией-держателем ресурса | ||
| 461 |
_tPhysics of the Solid State _oScientific Journal |
||
| 463 |
_tVol. 57, iss. 2 _v[P. 219-228] _d2015 |
||
| 610 | 1 | _aэлектронный ресурс | |
| 610 | 1 | _aтруды учёных ТПУ | |
| 701 | 1 |
_aKuznetsov _bP. V. _cphysicist _cAssociate Professor of Tomsk Polytechnic University, Candidate of physical and mathematical sciences _f1952- _gPavel Viktorovich _2stltpush _3(RuTPU)RU\TPU\pers\34499 |
|
| 701 | 1 |
_aMironov _bYu. P. |
|
| 701 | 1 |
_aTolmachev _bA. I. |
|
| 701 | 1 |
_aBordulev _bYu. S. _cphysicist _cEngineer of Tomsk Polytechnic University _f1990- _gYuri Sergeevich _2stltpush _3(RuTPU)RU\TPU\pers\31883 |
|
| 701 | 1 |
_aLaptev _bR. S. _cphysicist _cEngineer of Tomsk Polytechnic University, Assistant _f1987- _gRoman Sergeevich _2stltpush _3(RuTPU)RU\TPU\pers\31884 |
|
| 701 | 1 |
_aLider _bA. M. _cPhysicist _cAssociate Professor of Tomsk Polytechnic University, Candidate of Physical and Mathematical Sciences (PhD) _f1976- _gAndrey Markovich _2stltpush _3(RuTPU)RU\TPU\pers\30400 |
|
| 701 | 1 |
_aKorznikov _bA. V. |
|
| 712 | 0 | 2 |
_aНациональный исследовательский Томский политехнический университет (ТПУ) _bФизико-технический институт (ФТИ) _bКафедра общей физики (ОФ) _h136 _2stltpush _3(RuTPU)RU\TPU\col\18734 |
| 801 | 2 |
_aRU _b63413507 _c20150507 _gRCR |
|
| 856 | 4 | _uhttp://dx.doi.org/10.1134/S1063783415020225 | |
| 942 | _cCF | ||