| 000 | 03307nla2a2200409 4500 | ||
|---|---|---|---|
| 001 | 641302 | ||
| 005 | 20231030040424.0 | ||
| 035 | _a(RuTPU)RU\TPU\network\6202 | ||
| 035 | _aRU\TPU\network\6199 | ||
| 090 | _a641302 | ||
| 100 | _a20150515a2015 k y0engy50 ba | ||
| 101 | 0 | _aeng | |
| 105 | _ay z 100zy | ||
| 135 | _adrcn ---uucaa | ||
| 181 | 0 | _ai | |
| 182 | 0 | _ab | |
| 200 | 1 |
_aInfluence of Crystal Defects on the Reflectivity of the Aluminum _fS. P. Umnov, O. Kh Asainov, A. N. Lemachko |
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| 203 |
_aText _celectronic |
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| 225 | 1 | _aMaterial Engineering and Technologies | |
| 300 | _aTitle screen | ||
| 330 | _aThe effect of ion-assisted deposition of the Al films on their UV reflectance is investigated in this paper. The films' reflectance is measured by a spectrophotometer. The obtained films are examined by using transmission electron microscopy (TEM), X-ray diffraction analysis (XRD), and atomic force microscopy (AFM). The TEM and AFM measurements allow the determination of the size of crystallites in a film and its microstructure. The XRD analysis reveals that the films deposited with argon ion-beam assist are characterized by much higher microstress levels compared to the films deposited without ion assist. The comparison of the Al films’ reflectance measurements indicate that the films with a higher microstress level (hence, higher defect concentration) are characterized by the enhanced reflectance in the UV region. The conducted investigation shows that the defects of the Al films’ crystalline structure affect its optical properties. | ||
| 333 | _aРежим доступа: по договору с организацией-держателем ресурса | ||
| 461 | 0 |
_0(RuTPU)RU\TPU\network\5920 _tApplied Mechanics and Materials _oScientific Journal |
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| 463 | 0 |
_0(RuTPU)RU\TPU\network\6028 _tVol. 756 : Mechanical Engineering, Automation and Control Systems (MEACS2014) _oInternational Conference, 16‐18 October, 2014, Tomsk, Russia _o[proceedings] _fNational Research Tomsk Polytechnic University (TPU) _v[P. 164-168] _d2015 |
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| 610 | 1 | _aэлектронный ресурс | |
| 610 | 1 | _aтруды учёных ТПУ | |
| 610 | 1 | _aдефекты | |
| 610 | 1 | _aкристаллические решетки | |
| 610 | 1 | _aмагнетронное распыление | |
| 610 | 1 | _aкоэффициенты отражения | |
| 700 | 1 |
_aUmnov _bS. P. _cphysicist _cSenior researcher of Tomsk Polytechnic University, Candidate of physical and mathematical sciences _f1957- _gSergey Pavlovich _2stltpush _3(RuTPU)RU\TPU\pers\34215 |
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| 701 | 1 |
_aAsainov _bO. Kh. _cphysicist _cHead of the laboratory of Tomsk Polytechnic University, Candidate of physical and mathematical sciences _f1957- _gOleg Khaydarovich _2stltpush _3(RuTPU)RU\TPU\pers\34632 |
|
| 701 | 1 |
_aLemachko _bA. N. |
|
| 712 | 0 | 2 |
_aНациональный исследовательский Томский политехнический университет (ТПУ) _bФизико-технический институт (ФТИ) _bКафедра технической физики (№ 23) (ТФ) _bЛаборатория № 16 _h6468 _2stltpush _3(RuTPU)RU\TPU\col\19671 |
| 801 | 2 |
_aRU _b63413507 _c20161229 _gRCR |
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| 856 | 4 | _uhttp://dx.doi.org/10.4028/www.scientific.net/AMM.756.164 | |
| 942 | _cCF | ||