| 000 | 05961nla2a2200601 4500 | ||
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| 001 | 641721 | ||
| 005 | 20231030040437.0 | ||
| 035 | _a(RuTPU)RU\TPU\network\6638 | ||
| 035 | _aRU\TPU\network\6635 | ||
| 090 | _a641721 | ||
| 100 | _a20150530d2014 k y0rusy50 ba | ||
| 101 | 0 | _aeng | |
| 105 | _aa z 101zy | ||
| 135 | _adrgn ---uucaa | ||
| 181 | 0 | _ai | |
| 182 | 0 | _ab | |
| 200 | 1 |
_aThe effect of Si content on structure and mechanical features of silicon-containing calcium phosphorus-based films deposited by rf-magnetron sputtering on titanium substrate treated by pulsed electron beam _fM. A. Surmeneva [et al.] |
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| 203 |
_aText _celectronic |
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| 225 | 1 | _aAdvanced Material & Nanotechnology | |
| 225 | 1 | _aNano-Technology | |
| 300 | _aTitle screen | ||
| 320 | _a[References: 13 tit.] | ||
| 330 | _aSilicon-containing calcium phosphate (Si-CaP)coatings were fabricated by radio frequency (rf) magnetronsputtering of targets prepared from hydroxyapatite (HA) powderwith different silicon content. A powder of Si-HA(Ca[10](PO[4])[6-x](SiO[4])[x](OH)[2-x], x=0.5 and 1.72) was prepared bymechanochemical activation and then used as a precursorpowderto prepare a target for sputtering. The titanium substratewas acid etched and treated with pulsed electron beam with anenergy density of 15 J/cm{2}. The phase composition and structure,nanohardness and Young’s modulus of Si-CaP coating depositedon titanium substrate were investigated by X-ray diffraction andnanoindentation test, respectively. The average crystallite size asdetermined by XRD was 28 nm for coatings obtained bysputtering of the target prepared from the Si-HA powder (x=0.5),whereas Si-CaP (Si-HA powder x=1.72) films showed anamorphous structure. The nanohardness and the Young’smodulus of the Si-HA coating (x=0.5) deposited on titaniumtreated by pulsed electron beam treatment are enhanced to 4.5and 113 GPa compared to titanium substrate. Increase of Sicontent resulted in a dramatic reduction of the nanohardness andYoung’s modulus of Si-CaP films. However, Si-CaP with thehighest Si content exhibited significantly lower values of elasticmodulus, but slightly higher values of H/E and H[3]/E[2], than didthe non-coated specimens. Therefore, the structure of films has asignificant effect on tribological and mechanical properties of thedeposited coatings. Rf-magnetron sputtering allowed to produceSi-CaP coatings with higher nanohardness and lower elasticmodulus compared to titanium substrate. | ||
| 337 | _aAdobe Reader | ||
| 463 | 0 |
_0(RuTPU)RU\TPU\network\6394 _tThe 9th International Forum on Strategic Techology (IFOST-2014), September 21-23, 2014, Cox's Bazar, Bangladesh _o[proceedings] _v[3 p.] _d2014 |
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| 610 | 1 | _aэлектронный ресурс | |
| 610 | 1 | _aтруды учёных ТПУ | |
| 610 | 1 | _aраспыление | |
| 610 | 1 | _aфосфат кальция | |
| 610 | 1 | _aнанотвердость | |
| 610 | 1 | _aкремний | |
| 610 | 1 | _aпленки | |
| 610 | 1 | _aмагнетронное распыление | |
| 610 | 1 | _aВЧ-распыление | |
| 610 | 1 | _aэлектронные пучки | |
| 610 | 1 | _aподложки | |
| 701 | 1 |
_aSurmeneva (Ryabtseva) _bM. A. _cspecialist in the field of material science _cengineer-researcher of Tomsk Polytechnic University, Associate Scientist _f1984- _gMaria Alexandrovna _2stltpush _3(RuTPU)RU\TPU\pers\31894 |
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| 701 | 1 |
_aSurmenev _bR. A. _cphysicist _cAssociate Professor of Tomsk Polytechnic University, Senior researcher, Candidate of physical and mathematical sciences _f1982- _gRoman Anatolievich _2stltpush _3(RuTPU)RU\TPU\pers\31885 |
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| 701 | 1 |
_aTyurin _bA. I. |
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| 701 | 1 |
_aMukhametkaliev _bT. M. _cphysicist _cresearch engineer at Tomsk Polytechnic University _f1991- _gTimur Mukhamedrashidovich _2stltpush _3(RuTPU)RU\TPU\pers\34243 |
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| 701 | 1 |
_aTeresov _bA. D. |
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| 701 | 1 |
_aKoval _bN. N. _cspecialist in the field of electronics _cProfessor of Tomsk Polytechnic University, Doctor of technical sciences _f1948- _gNikolay Nikolaevich _2stltpush _3(RuTPU)RU\TPU\pers\34748 |
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| 701 | 1 |
_aPirozhkova _bT. S. |
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| 701 | 1 |
_aShuvarin _bI. A. |
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| 701 | 1 |
_aChudinova _bE. A. _cphysicist _claboratory assistant of Tomsk Polytechnic University _f1993- _gEkaterina Aleksandrovna _2stltpush _3(RuTPU)RU\TPU\pers\34765 |
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| 701 | 1 |
_aSyrtanov _bM. S. _cphysicist _cengineer of Tomsk Polytechnic University _f1990- _gMaksim Sergeevich _2stltpush _3(RuTPU)RU\TPU\pers\34764 |
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| 712 | 0 | 2 |
_aНациональный исследовательский Томский политехнический университет (ТПУ) _bФизико-технический институт (ФТИ) _bКафедра теоретической и экспериментальной физики (ТиЭФ) _bЦентр технологий (ЦТ) _h408 _2stltpush _3(RuTPU)RU\TPU\col\20620 |
| 712 | 0 | 2 |
_aНациональный исследовательский Томский политехнический университет (ТПУ) _bФизико-технический институт (ФТИ) _bКафедра теоретической и экспериментальной физики (ТиЭФ) _h138 _2stltpush _3(RuTPU)RU\TPU\col\18726 |
| 712 | 0 | 2 |
_aНациональный исследовательский Томский политехнический университет (ТПУ) _bИнститут физики высоких технологий (ИФВТ) _bКафедра сильноточной электроники (СЭ) _h2047 _2stltpush _3(RuTPU)RU\TPU\col\18691 |
| 712 | 0 | 2 |
_aНациональный исследовательский Томский политехнический университет (ТПУ) _bФизико-технический институт (ФТИ) _bКафедра общей физики (ОФ) _h136 _2stltpush _3(RuTPU)RU\TPU\col\18734 |
| 801 | 2 |
_aRU _b63413507 _c20161215 _gRCR |
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| 856 | 4 | _uhttp://180.211.172.109/ifost2014Pro/pdf/S5-P53.pdf | |
| 942 | _cCF | ||