| 000 | 03492nla2a2200457 4500 | ||
|---|---|---|---|
| 001 | 642935 | ||
| 005 | 20231030040520.0 | ||
| 035 | _a(RuTPU)RU\TPU\network\7923 | ||
| 035 | _aRU\TPU\network\7298 | ||
| 090 | _a642935 | ||
| 100 | _a20150825a2015 k y0engy50 ba | ||
| 101 | 0 | _aeng | |
| 102 | _aGB | ||
| 105 | _ay z 100zy | ||
| 135 | _adrcn ---uucaa | ||
| 181 | 0 | _ai | |
| 182 | 0 | _ab | |
| 200 | 1 |
_aChange Spectrum Characteristics Modification of Films Deposited by Magnetron Sputtering with the Assistance of Argon Ions Beam _fS. P. Umnov, O. Kh. Asainov |
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| 203 |
_aText _celectronic |
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| 300 | _aTitle screen | ||
| 320 | _a[References: 11 tit.] | ||
| 330 | _aThin aluminum films were prepared using the method of magnetron sputtering with and without argon ion beam assistance. The influence of argon ion beam on the reflectivity in the UV range and the structure of aluminum films was studied. The structure of the films was studied by transmission electron microscopy (TEM), X-ray diffractometry (XRD) and atomic-force microscope (AFM). The study has shown that the films deposed with the assistance of the argon ion beam have more significant microstresses associated with an increase of crystallites microstructure defects as compared to the films deposed without ion assistance. Comparison of the measured reflectivity of aluminum films deposed without and with the assistance of the ion beam has shown that the films characterized by a higher level of microstructure def ects have increased reflectivity in the UV range. The studies suggest that the defects of thin aluminum films crystal structure influence its optical properties. | ||
| 333 | _aРежим доступа: по договору с организацией-держателем ресурса | ||
| 337 | _aAdobe Reader | ||
| 461 | 1 |
_0(RuTPU)RU\TPU\network\2008 _tIOP Conference Series: Materials Science and Engineering |
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| 463 | 1 |
_0(RuTPU)RU\TPU\network\7891 _tVol. 81 : Radiation-Thermal Effects and Processes in Inorganic Materials _oInternational Scientific Conference, 3-8 November 2014, Tomsk, Russia _o[proceedings] _v[012001, 5 p.] _d2015 |
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| 610 | 1 | _aэлектронный ресурс | |
| 610 | 1 | _aтруды учёных ТПУ | |
| 610 | 1 | _aспектры | |
| 610 | 1 | _aпленки | |
| 610 | 1 | _aмагнетронное распыление | |
| 610 | 1 | _aионы аргона | |
| 610 | 1 | _aпросвечивающая электронная микроскопия | |
| 610 | 1 | _aрентгеновская дифрактометрия | |
| 700 | 1 |
_aUmnov _bS. P. _cphysicist _cSenior researcher of Tomsk Polytechnic University, Candidate of physical and mathematical sciences _f1957- _gSergey Pavlovich _2stltpush _3(RuTPU)RU\TPU\pers\34215 |
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| 701 | 1 |
_aAsainov _bO. Kh. _cphysicist _cHead of the laboratory of Tomsk Polytechnic University, Candidate of physical and mathematical sciences _f1957- _gOleg Khaydarovich _2stltpush _3(RuTPU)RU\TPU\pers\34632 |
|
| 712 | 0 | 2 |
_aНациональный исследовательский Томский политехнический университет (ТПУ) _bФизико-технический институт (ФТИ) _bКафедра технической физики (№ 23) (ТФ) _bЛаборатория № 16 _h6468 _2stltpush _3(RuTPU)RU\TPU\col\19671 |
| 801 | 2 |
_aRU _b63413507 _c20161212 _gRCR |
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| 856 | 4 | _uhttp://dx.doi.org/10.1088/1757-899X/81/1/012001 | |
| 856 | 4 | _uhttp://earchive.tpu.ru/handle/11683/14685 | |
| 942 | _cCF | ||