| 000 | 02210nlm0a2200373 4500 | ||
|---|---|---|---|
| 001 | 643635 | ||
| 005 | 20231030040549.0 | ||
| 035 | _a(RuTPU)RU\TPU\network\8630 | ||
| 090 | _a643635 | ||
| 100 | _a20150918a2015 k y0engy50 ba | ||
| 101 | 0 | _aeng | |
| 105 | _aa z 101zy | ||
| 135 | _adrcn ---uucaa | ||
| 181 | 0 | _ai | |
| 182 | 0 | _ab | |
| 200 | 1 |
_aEffect in GaAs produced by fast neutrons and protons _fE. G. Soboleva, V. V. Litvinenko, T. B. Krit |
|
| 203 |
_aText _celectronic |
||
| 300 | _aTitle screen | ||
| 320 | _a[References: 12 tit.] | ||
| 330 | _aIt has been found that of P-type defects to total defect formation is larger in GaAs samples irradiated with high-energy (65 MeV) protons or fast neutrons. The E4 and E5 defects are annealed out after heat treatment of such samples at a temperature near 200°C; as a result, the shape and intensity of the U band change somewhat. | ||
| 333 | _aРежим доступа: по договору с организацией-держателем ресурса | ||
| 463 |
_tControl and Communications (SIBCON-2015) _oInternational Siberian Conference on Russia, Omsk, May 21-23, 2015 _v[4 p.] _o[proceedings] _d2015 |
||
| 610 | 1 | _aэлектронный ресурс | |
| 610 | 1 | _aтруды учёных ТПУ | |
| 610 | 1 | _aнейтроны | |
| 610 | 1 | _aпротоны | |
| 610 | 1 | _aбарьеры Шоттки | |
| 700 | 1 |
_aSoboleva _bE. G. _cphysicist _cAssociate Professor of Yurga technological Institute of Tomsk Polytechnic University, Candidate of physical and mathematical Sciences _f1976- _gElvira Gomerovna _2stltpush _3(RuTPU)RU\TPU\pers\32994 |
|
| 701 | 1 |
_aLitvinenko _bV. V. _gViktoriya Vladimirovna |
|
| 701 | 1 |
_aKrit _bT. B. _gTimofey Borisovich |
|
| 712 | 0 | 2 |
_aНациональный исследовательский Томский политехнический университет (ТПУ) _bЮргинский технологический институт (филиал) (ЮТИ) _bКафедра естественного научного образования (ЕНО) _h7134 _2stltpush _3(RuTPU)RU\TPU\col\18894 |
| 801 | 2 |
_aRU _b63413507 _c20160229 _gRCR |
|
| 856 | 4 | _uhttp://dx.doi.org/10.1109/SIBCON.2015.7147220 | |
| 942 | _cCF | ||