| 000 | 03154nlm0a2200349 4500 | ||
|---|---|---|---|
| 001 | 643872 | ||
| 005 | 20231030040558.0 | ||
| 035 | _a(RuTPU)RU\TPU\network\8871 | ||
| 090 | _a643872 | ||
| 100 | _a20151009a2015 k y0rusy50 ba | ||
| 101 | 0 | _aeng | |
| 105 | _aa z 101zy | ||
| 135 | _adrcn ---uucaa | ||
| 181 | 0 | _ai | |
| 182 | 0 | _ab | |
| 200 | 1 |
_aFormation of high power microwave pulses with adjustable parameters in active X-band RF compression systems _fV. A. Avgustinovich [et al.] |
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| 203 |
_aText _celectronic |
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| 300 | _aTitle screen | ||
| 320 | _a[References: p. 191-192 (12 tit.)] | ||
| 330 | _aThe work presents the results of theoretical and experimental studies of the formation of microwave pulses with the adjustable power, duration, repetition rate and the envelope form during energy output from the cavity by controlled transformation of the oscillation mode at the waveguide stub coupling aperture. Pulse parameters are changed by adjustable elements of the coupling of modes, which directly affect to the coefficient of the coupling of modes h. The possibility to form a series of subnanosecond MW pulses at a fractional energy output and nanosecond pulses of various pulse duration at a single complete output of high frequency energy from the compressor cavity is demonstrated. The envelope of the pulses is calculated through the recurrence relations between the amplitudes of waves in the system, the relations between which have been recorded according to the scattering matrix method. Using this approach on passive X-band RF pulse compression system, we obtained power gain of 8-9 dB, 8-10 ns pulse duration at 9.248 GHz. | ||
| 333 | _aРежим доступа: по договору с организацией-держателем ресурса | ||
| 463 |
_tMicro/Nanotechnologies and Electron Devices (EDM) _o16th International Conference of Young Specialists, 29 June - 3 July 2015, Erlagol, Altai _v[P. 189-192] _d2015 |
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| 610 | 1 | _aэлектронный ресурс | |
| 610 | 1 | _aтруды учёных ТПУ | |
| 701 | 1 |
_aAvgustinovich _bV. A. _cradiophysist _cLeading engineer of Tomsk Polytechnic University _f1941- _gVladimir Andreevich _2stltpush _3(RuTPU)RU\TPU\pers\32425 |
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| 701 | 1 |
_aArtemenko _bS. N. _cphysicist _cLeading researcher of Tomsk Polytechnic University, Doctor of physical and mathematical science _f1951- _gSergey Nikolaevich _2stltpush _3(RuTPU)RU\TPU\pers\31801 |
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| 701 | 1 |
_aIgumnov _bV. S. _cPhysicist _cEngineer of Tomsk Polytechnic University _f1982- _gVladislav Sergeevich _2stltpush _3(RuTPU)RU\TPU\pers\32718 |
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| 701 | 1 |
_aYushkov _bY. G. _celectrophysicist _cProfessor of Tomsk Polytechnic University, Doctor of technical sciences _f1937- _gYuri Georgievich _2stltpush _3(RuTPU)RU\TPU\pers\25936 |
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| 712 | 0 | 2 |
_aНациональный исследовательский Томский политехнический университет (ТПУ) _bФизико-технический институт (ФТИ) _bЛаборатория № 46 _h6476 _2stltpush _3(RuTPU)RU\TPU\col\19319 |
| 801 | 2 |
_aRU _b63413507 _c20151009 _gRCR |
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| 856 | 4 | _uhttp://dx.doi.org/10.1109/EDM.2015.7184524 | |
| 942 | _cCF | ||