| 000 | 02802nlm0a2200325 4500 | ||
|---|---|---|---|
| 001 | 643878 | ||
| 005 | 20231030040559.0 | ||
| 035 | _a(RuTPU)RU\TPU\network\8877 | ||
| 090 | _a643878 | ||
| 100 | _a20151009d2009 k y0rusy50 ca | ||
| 101 | 0 | _aeng | |
| 105 | _ay z 100zy | ||
| 181 | 0 | _ai | |
| 182 | 0 | _ab | |
| 200 | 1 |
_aPerspectives of capacitive discharge application for pumping of metal vapor lasers with modified kinetics _fF. A. Gubarev [et al.] |
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| 203 |
_aText _celectronic |
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| 300 | _aTitle screen | ||
| 320 | _a[References: p. 321 (9 tit.)] | ||
| 330 | _aThe paper presents the study of CuBr lasers excited by longitudinal capacitive discharge. Performance characteristics of the laser with outer electrodes using various excitation circuits are considered. The effect of HBr additive on the discharge and lasing characteristics of capacitively excited CuBr laser is contrasted to that of conventional pulse-periodic discharge with inner electrodes. It is shown that when using such a type of pumping the influence of electronegative HBr additive depends on the type of the excitation circuit that is used. The best results are achieved when using the circuits providing a high rate of rise of the discharge current. The maximum increasing of output power and laser efficiency (up to 3 times) with HBr additive was obtained in a gas discharge tube of a relatively large bore (2.7 cm), which suggests good output power scaling of CuBr-HBr laser with capacitive discharge pumping. | ||
| 333 | _aРежим доступа: по договору с организацией-держателем ресурса | ||
| 463 |
_tMicro/ Nanotechnologies and Electron Devices (EDM) _oInternational Conference and Seminar, 1-6 July 2009, Novosibirsk _v[P. 317-322] _d2009 |
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| 610 | 1 | _aтруды учёных ТПУ | |
| 610 | 1 | _aэлектронный ресурс | |
| 701 | 1 |
_aGubarev _bF. A. _cspecialist in the field of electronics _cAssociate Professor of Tomsk Polytechnic University, Candidate of physical and mathematical sciences _f1979- _gFedor Aleksandrovich _2stltpush _3(RuTPU)RU\TPU\pers\31657 _4070 |
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| 701 | 1 |
_aEvtushenko _bG. S. _cDoctor of Technical Sciences, Professor of Tomsk Polytechnic University (TPU) _cRussian specialist in electrophysics _f1947- _gGennady Sergeevich _2stltpush _3(RuTPU)RU\TPU\pers\29009 _4070 |
|
| 701 | 1 |
_aShiyanov _bD. V. _cspecialist in the field of electronics _cEngineer of Tomsk Polytechnic University _f1973- _gDmitry Valeryevich _2stltpush _3(RuTPU)RU\TPU\pers\31659 _4070 |
|
| 701 | 1 |
_aSukhanov _bV. B. _cspecialist in the field of electronics _cEngineer of Tomsk Polytechnic University _f1945- _gViktor Borisovich _2stltpush _3(RuTPU)RU\TPU\pers\31658 _4070 |
|
| 801 | 2 |
_aRU _b63413507 _c20160229 _gRCR |
|
| 856 | 4 | 0 | _uhttp://dx.doi.org/10.1109/EDM.2009.5174000 |
| 942 | _cCF | ||