| 000 | 02835nlm0a2200361 4500 | ||
|---|---|---|---|
| 001 | 644831 | ||
| 005 | 20231030040632.0 | ||
| 035 | _a(RuTPU)RU\TPU\network\9915 | ||
| 090 | _a644831 | ||
| 100 | _a20151201a2015 k y0rusy50 ba | ||
| 101 | 0 | _aeng | |
| 105 | _aa z 101zy | ||
| 135 | _adrnn ---uucaa | ||
| 181 | 0 | _ai | |
| 182 | 0 | _ab | |
| 200 | 1 |
_aAspects for efficient wide spectral band THz generation via CO2 laser down conversion _fYu. N. Panchenko [et al.] |
|
| 203 |
_aText _celectronic |
||
| 300 | _aTitle screen | ||
| 330 | _aDetailed model study of THz generation by CO2 laser down-conversion in pure and solid solution crystals GaSe1-xSx is carried out for the first time. Both forward and backward collinear interactions of common (eo-e, oe-e, oe-o, oo-e, ee-o) and original (ee-e, oo-o) types are considered. Possibility of realization, phase matching angles and figure of merits are estimated for line mixing within 9 ?m and 10 ?m emission bands, as well between them. Dispersion properties of o- and e-wave refractive indices and absorption coefficients for GaSe, GaS and GaSe1-xSx crystals were preliminary measured by THz-TDS, approximated in the equation form and then used in the study. Estimated results are presented in the form of 3-D figures that are suitable for rapid analyses of DFG parameters. The most efficient type of interaction is eo-o type. Optimally doped (x = 0.09-0.13) GaSe1-xSx crystals are from 4 to 5 times more efficient at limit pump intensity than not doped GaSe crystals. | ||
| 333 | _aРежим доступа: по договору с организацией-держателем ресурса | ||
| 461 | _tProceedings of SPIE | ||
| 463 |
_tVol. 9255 : XX International Symposium on High-Power Laser Systems and Applications 2014, Chengdu, China, August 25, 2014 _v[92554P, 9 p.] _d2015 |
||
| 610 | 1 | _aэлектронный ресурс | |
| 610 | 1 | _aтруды учёных ТПУ | |
| 701 | 1 |
_aPanchenko _bYu. N. _gYury Nikolaevich |
|
| 701 | 1 |
_aAndreev _bYu. M. _gYury Mikhaylovich |
|
| 701 | 1 |
_aLansky _bG. V. _gGrigory Vladimirovich |
|
| 701 | 1 |
_aLosev _bV. F. _cspecialist in the field of automation equipment and electronics _cProfessor of Tomsk Polytechnic University, Doctor of physical and mathematical sciences _f1950- _gValery Fedorovich _2stltpush _3(RuTPU)RU\TPU\pers\35594 |
|
| 701 | 1 |
_aLubenko _bD. M. _gDmitry Mikhaylovich |
|
| 712 | 0 | 2 |
_aНациональный исследовательский Томский политехнический университет (ТПУ) _bИнститут физики высоких технологий (ИФВТ) _bКафедра сильноточной электроники (СЭ) _h2047 _2stltpush _3(RuTPU)RU\TPU\col\18691 |
| 801 | 2 |
_aRU _b63413507 _c20151201 _gRCR |
|
| 856 | 4 | _uhttp://dx.doi.org/10.1117/12.2065345 | |
| 942 | _cCF | ||