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035 _a(RuTPU)RU\TPU\network\9919
090 _a644835
100 _a20151202a2015 k y0engy50 ba
101 0 _aeng
_deng
135 _adrcn ---uucaa
181 0 _ai
182 0 _ab
200 1 _aGenerating femtosecond pulses in the mid-IR and THz ranges in GaSe1 − x Te xcrystals
_fD. M. Lubenko [et al.]
203 _aText
_celectronic
225 1 _aProceedings Of The International Conference "Luminescence And Laser Physics, 2014"
300 _aTitle screen
320 _a[References: p. 241 (19 tit.)]
330 _aGaSe crystals with 0, 0.07, 0.38, 0.67, 2.07, 3, and 5 wt % Te are grown. GaSe:Te (≤2.07 wt %) crystals are suitable for nonlinear optics applications. The optimum doping level is 0.07 wt %. This minimizes optical losses and increases the damage threshold by ≥20%, hardness by 33%, and the efficiency of femtosecond Ti:Sa laser frequency conversion into the 8.8-24 μm and 0.2-3 THz ranges by ≥50%.
333 _aРежим доступа: по договору с организацией-держателем ресурса
461 _tBulletin of the Russian Academy of Sciences: Physics
_oScientific Journal
_d2007-
463 _tVol. 79, iss. 2
_v[P. 238-241]
_d2015
610 1 _aэлектронный ресурс
610 1 _aтруды учёных ТПУ
701 1 _aLubenko
_bD. M.
_gDmitry Mikhaylovich
701 1 _aLosev
_bV. F.
_cspecialist in the field of automation equipment and electronics
_cProfessor of Tomsk Polytechnic University, Doctor of physical and mathematical sciences
_f1950-
_gValery Fedorovich
_2stltpush
_3(RuTPU)RU\TPU\pers\35594
701 1 _aAndreev
_bYu. M.
_gYury Mikhaylovich
701 1 _aLansky
_bG. V.
_gGrigory Vladimirovich
701 1 _aSvetlichniy
_bV. A.
_gValery Anatoljevich
712 0 2 _aНациональный исследовательский Томский политехнический университет (ТПУ)
_bИнститут физики высоких технологий (ИФВТ)
_bКафедра сильноточной электроники (СЭ)
_h2047
_2stltpush
_3(RuTPU)RU\TPU\col\18691
801 2 _aRU
_b63413507
_c20151202
_gRCR
856 4 _uhttp://dx.doi.org/10.3103/S1062873815020161
942 _cCF