| 000 | 03114nlm0a2200469 4500 | ||
|---|---|---|---|
| 001 | 644912 | ||
| 005 | 20231030040635.0 | ||
| 035 | _a(RuTPU)RU\TPU\network\9996 | ||
| 035 | _aRU\TPU\network\9038 | ||
| 090 | _a644912 | ||
| 100 | _a20151204d2014 k y0engy50 ba | ||
| 101 | 0 | _aeng | |
| 102 | _aNL | ||
| 105 | _ay z 100zy | ||
| 135 | _adrcn ---uucaa | ||
| 181 | 0 | _ai | |
| 182 | 0 | _ab | |
| 200 | 1 |
_aIonized vapor deposition of antimicrobial Ti–Cu films with controlled copper release _fV. Stranak, H. Wulff, P. Ksirova [et al.] |
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| 203 |
_aText _celectronic |
||
| 300 | _aTitle screen | ||
| 320 | _a[References: p. 394 (48 tit.)] | ||
| 330 | _aFormation of Ti-Cu thin films with regard to controlling the copper release is reported in the paper. Copper released from films can inhibit bacterial colonization and can be utilized as an implant surface modification. The copper release has to be controlled (i) to repress the bacteria growth and (ii) to balance the Cu level tolerated by osteoblasts cells. The dual-high power impulse magnetron sputtering superimposed with mid-frequency discharge was employed for ionized vapor deposition of Ti-Cu films. It was found that the microscopical architecture of films is strongly influenced by the pressure during the deposition process. There is an indication that these structural changes are caused by the energy of deposited species (ion distribution functions were measured by time-resolved retarding field analyzer). Grain-like structure with large Cu crystals is formed at higher pressures, i.e. at low ion energies. The grain-like microstructure increases an effective film area which encourages the copper release. It is demonstrated that controlled copper release can be achieved by appropriate setting of the input experimental parameters (pressure, mean discharge current). | ||
| 333 | _aРежим доступа: по договору с организацией-держателем ресурса | ||
| 461 |
_tThin Solid Films _d1967- |
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| 463 |
_tVol. 550 _v[P. 389–394] _d2015 |
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| 610 | 1 | _aэлектронный ресурс | |
| 610 | 1 | _aтруды учёных ТПУ | |
| 701 | 1 |
_aStranak _bV. _gVitezslav |
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| 701 | 1 |
_aWulff _bH. _gHarm |
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| 701 | 1 |
_aKsirova _bP. _gPetra |
|
| 701 | 1 |
_aZietz _bC. _gCarmen |
|
| 701 | 1 |
_aDrache _bS. _gSteffen |
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| 701 | 1 |
_aCada _bM. _gMartin |
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| 701 | 1 |
_aHubicka _bZ. _gZdenek |
|
| 701 | 1 |
_aBader _bR. _gRainer |
|
| 701 | 1 |
_aTichy _bM. _cchemist _cProfessor of Tomsk Polytechnic University, Doctor of physical and mathematical sciences _f1947- _gMilan _2stltpush _3(RuTPU)RU\TPU\pers\35771 |
|
| 701 | 1 |
_aHelm _bCh. A. _gChristiane |
|
| 701 | 1 |
_aHipplera _bR. _gRainer |
|
| 712 | 0 | 2 |
_aНациональный исследовательский Томский политехнический университет (ТПУ) _bФизико-технический институт (ФТИ) _bКафедра технической физики (№ 23) (ТФ) _h52 _2stltpush _3(RuTPU)RU\TPU\col\18732 |
| 801 | 2 |
_aRU _b63413507 _c20210616 _gRCR |
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| 856 | 4 | _uhttp://dx.doi.org/10.1016/j.tsf.2013.11.001 | |
| 942 | _cCF | ||