| 000 | 02832nla2a2200457 4500 | ||
|---|---|---|---|
| 001 | 644993 | ||
| 005 | 20231030040637.0 | ||
| 035 | _a(RuTPU)RU\TPU\network\10077 | ||
| 035 | _aRU\TPU\network\10076 | ||
| 090 | _a644993 | ||
| 100 | _a20151207a2015 k y0engy50 ba | ||
| 101 | 0 | _aeng | |
| 105 | _ay z 100zy | ||
| 135 | _adrgn ---uucaa | ||
| 181 | 0 | _ai | |
| 182 | 0 | _ab | |
| 200 | 1 |
_aRole of Crystallographic Anisotropy in the Formation of Surface Layers of Single NiTi Crystals after Ion-Plasma Alloying _fT. M. Poletika [et al.] |
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| 203 |
_aText _celectronic |
||
| 300 | _aTitle screen | ||
| 320 | _a[References: 7 tit.] | ||
| 330 | _aThe structure of the surface and near-surface layers of single crystals of NiTi, differently oriented relative to the direction of ion beam treatment was investigated. The role of the crystallographic orientation in formation of structure of surface layers after ion-plasma alloying was revealed. It was found that the orientation effects of selective sputtering and channeling determine the thickness of the oxide and amorphous layers, the depth of penetration of ions and impurities, the distribution of Ni with depth. | ||
| 333 | _aРежим доступа: по договору с организацией-держателем ресурса | ||
| 461 | 0 |
_0(RuTPU)RU\TPU\network\4816 _tAIP Conference Proceedings |
|
| 463 | 0 |
_0(RuTPU)RU\TPU\network\9779 _tVol. 1683 : Advanced Materials with Hierarchical Structure for New Technologies and Reliable Structures _oProceedings of the International Conference, 21–25 September 2015, Tomsk, Russia _fNational Research Tomsk Polytechnic University (TPU) ; ed. V. E. Panin ; S. G. Psakhie ; V. M. Fomin _v[020184, 4 p.] _d2015 |
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| 610 | 1 | _aэлектронный ресурс | |
| 610 | 1 | _aтруды учёных ТПУ | |
| 610 | 1 | _aанизотропия | |
| 610 | 1 | _aповерхностные слои | |
| 610 | 1 | _aкристаллы | |
| 610 | 1 | _aлегирование | |
| 610 | 1 | _aмонокристаллы | |
| 610 | 1 | _aионные пучки | |
| 701 | 1 |
_aPoletika _bT. M. |
|
| 701 | 1 |
_aMeisner _bL. L. |
|
| 701 | 1 |
_aGirsova _bS. L. |
|
| 701 | 1 |
_aMeisner _bS. N. |
|
| 701 | 1 |
_aShulepov _bI. A. _cphysicist _cEngineer-designer of Tomsk Polytechnic University, Candidate of physical and mathematical sciences _f1954- _gIvan Anisimovich _2stltpush _3(RuTPU)RU\TPU\pers\33092 |
|
| 712 | 0 | 2 |
_aНациональный исследовательский Томский политехнический университет (ТПУ) _bФизико-технический институт (ФТИ) _bЦентр измерений свойств материалов (ЦИСМ) _h6684 _2stltpush _3(RuTPU)RU\TPU\col\19361 |
| 801 | 2 |
_aRU _b63413507 _c20151207 _gRCR |
|
| 856 | 4 | _uhttp://dx.doi.org/10.1063/1.4932874 | |
| 942 | _cCF | ||