| 000 | 01944nlm1a2200349 4500 | ||
|---|---|---|---|
| 001 | 645131 | ||
| 005 | 20231030040642.0 | ||
| 035 | _a(RuTPU)RU\TPU\network\10215 | ||
| 035 | _aRU\TPU\network\10212 | ||
| 090 | _a645131 | ||
| 100 | _a20151210a1997 k y0engy50 ba | ||
| 101 | 0 | _aeng | |
| 135 | _adrcn ---uucaa | ||
| 181 | 0 | _ai | |
| 182 | 0 | _ab | |
| 200 | 1 |
_aFormation of heavily doped semiconductor layers by pulsed ion beam treatmen _fR. M. Bayazitov [et al.] |
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| 203 |
_aText _celectronic |
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| 300 | _aTitle screen | ||
| 320 | _a[References: p. 38 (12 tit.)] | ||
| 330 | _aThe formation of heavily doped Si and GaAs layers using implantation and powerful pulsed ion beams has been investigated. The influence of the depth distribution of energy released by the ions on the temperature profile and the electrically active impurity distribution in Si and GaAs is analyzed. It is shown that as a consequence of the simultaneous action of impurity diffusion processes normal to the surface and decomposition of GaAs at the surface, the heavily doped (8 × 1019cm−3) layers are formed in the subsurface region (0.1-0.5 μm). | ||
| 333 | _aРежим доступа: по договору с организацией-держателем ресурса | ||
| 461 |
_tNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms _oScientific Journal _d1984- |
||
| 463 |
_tVol. 122, iss. 1 _v[P. 35-38] _d1997 |
||
| 610 | 1 | _aэлектронный ресурс | |
| 610 | 1 | _aтруды учёных ТПУ | |
| 701 | 1 |
_aBayazitov _bR. M. |
|
| 701 | 1 |
_aZakirzyanova _bL. Kh. |
|
| 701 | 1 |
_aKhaibullin _bI. B. |
|
| 701 | 1 |
_aRemnev _bG. E. _cphysicist _cProfessor of Tomsk Polytechnic University, Doctor of technical sciences _f1948- _gGennady Efimovich _2stltpush _3(RuTPU)RU\TPU\pers\31500 |
|
| 801 | 2 |
_aRU _b63413507 _c20151210 _gRCR |
|
| 856 | 4 | _uhttp://dx.doi.org/10.1016/S0168-583X(96)00637-4 | |
| 942 | _cCF | ||