000 | 01838nlm1a2200337 4500 | ||
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001 | 645176 | ||
005 | 20231030040643.0 | ||
035 | _a(RuTPU)RU\TPU\network\10260 | ||
035 | _aRU\TPU\network\10257 | ||
090 | _a645176 | ||
100 | _a20151211a2009 k y0engy50 ba | ||
101 | 0 | _aeng | |
102 | _aUS | ||
135 | _adrcn ---uucaa | ||
181 | 0 | _ai | |
182 | 0 | _ab | |
200 | 1 |
_aInfluence of the configuration of the magnetic field of an ion diode on the parameters of an ion beam _fA. V. Stepanov, G. E. Remnev |
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203 |
_aText _celectronic |
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300 | _aTitle screen | ||
320 | _a[References: 8 tit.] | ||
330 | _aThe distribution of magnetic-field induction in the accelerating gap of an ion diode with external magnetic insulation is studied. The absence of a device for preliminary plasma production is a distinguishing feature of this diode. It is shown that a certain configuration of the magnetic field near the anode surface allows an increase in the ion-diode efficiency to 70%, and the ion-current density at the diode focus then reaches 350 A/cm2. | ||
333 | _aРежим доступа: по договору с организацией-держателем ресурса | ||
461 |
_tInstruments and Experimental Techniques _d1956- |
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463 |
_tVol. 52, iss. 4 _v[P. 565-568] _d2009 |
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610 | 1 | _aэлектронный ресурс | |
610 | 1 | _aтруды учёных ТПУ | |
700 | 1 |
_aStepanov _bA. V. _cphysicist _cResearcher of Tomsk Polytechnic University _f1981- _gAndrey Vladimirovich _2stltpush _3(RuTPU)RU\TPU\pers\32029 |
|
701 | 1 |
_aRemnev _bG. E. _cphysicist _cProfessor of Tomsk Polytechnic University, Doctor of technical sciences _f1948- _gGennady Efimovich _2stltpush _3(RuTPU)RU\TPU\pers\31500 |
|
801 | 2 |
_aRU _b63413507 _c20151211 _gRCR |
|
856 | 4 | _uhttp://dx.doi.org/10.1134/S0020441209040174 | |
942 | _cCF |