000 03265nla2a2200469 4500
001 646976
005 20231030040746.0
035 _a(RuTPU)RU\TPU\network\12113
035 _aRU\TPU\network\12110
090 _a646976
100 _a20160322a2015 k y0rusy50 ba
101 0 _aeng
105 _aa z 101zy
135 _adrcn ---uucaa
181 0 _ai
182 0 _ab
200 1 _aModification and ab-initio spectroscopic application of modified commerce terahertz spectrometer by using homemade parts
_fD. M. Lubenko [et al.]
203 _aText
_celectronic
225 1 _aLaser Systems and New Laser and Optical Technologies, Laser Applications
300 _aTitle screen
320 _a[References: 28 tit.]
330 _aAb-initio study on modification of commerce terahertz spectrometer with time resolution Z-3 (Zomega, USA) by substitution of ZnTe and GaP detectors and LT-GaAs generator for homemade of pure and S-doped GaSe is carried out. It was established that in spite of not optimized parameters pure and doped GaSe:S(0.3 mass%) crystal are comparable, relatively, in generation efficiency and detection sensitivity to commerce units due to lower nonlinear optical loss and much higher damage threshold. The advantages are in force from pump fluences of below 5 mJ/cm{2} for pure GaSe. The closer S-doping to optimal concentration, the lover fluences resulting in the advantages. Pure and S-doped GaSe demonstrate higher reliability and larger dynamic range of operation. Recorded absorption spectra well match known spectra.
333 _aРежим доступа: по договору с организацией-держателем ресурса
461 1 _0(RuTPU)RU\TPU\network\12028
_tProceedings of SPIE
463 0 _0(RuTPU)RU\TPU\network\12030
_tVol. 9810 : Atomic and Molecular Pulsed Lasers XII
_oInternational Conference, 13–18 September 2015, Tomsk, Russian Federation
_o[proceedings]
_fRussian Foundation for Basic Research Siberian Branch of Russian Academy of Sciences ; ed. V. F. Tarasenko, A. M. Kabanov
_v[981012, 10 p.]
_d2015
610 1 _aэлектронный ресурс
610 1 _aтруды учёных ТПУ
610 1 _aкристаллы
610 1 _aлегированные кристаллы
610 1 _aнелинейная оптика
610 1 _aспектроскопия
701 1 _aLubenko
_bD. M.
701 1 _aLosev
_bV. F.
_cspecialist in the field of automation equipment and electronics
_cProfessor of Tomsk Polytechnic University, Doctor of physical and mathematical sciences
_f1950-
_gValery Fedorovich
_2stltpush
_3(RuTPU)RU\TPU\pers\35594
701 1 _aAndreev
_bYu. M.
701 1 _aKokh
_bK. A.
701 1 _aLanskii
_bG. V.
701 1 _aSvetlichnyi
_bV. A.
712 0 2 _aНациональный исследовательский Томский политехнический университет (ТПУ)
_bИнститут физики высоких технологий (ИФВТ)
_bКафедра сильноточной электроники (СЭ)
_h2047
_2stltpush
_3(RuTPU)RU\TPU\col\18691
801 2 _aRU
_b63413507
_c20161121
_gRCR
856 4 _uhttp://dx.doi.org/10.1117/12.2224941
856 4 _uhttp://earchive.tpu.ru/handle/11683/17655
942 _cCF