| 000 | 02870nla2a2200445 4500 | ||
|---|---|---|---|
| 001 | 647029 | ||
| 005 | 20231030040748.0 | ||
| 035 | _a(RuTPU)RU\TPU\network\12166 | ||
| 035 | _aRU\TPU\network\12164 | ||
| 090 | _a647029 | ||
| 100 | _a20160323a2016 k y0engy50 ba | ||
| 101 | 0 | _aeng | |
| 105 | _ay z 100zy | ||
| 135 | _adrgn ---uucaa | ||
| 181 | 0 | _ai | |
| 182 | 0 | _ab | |
| 200 | 1 |
_aCarbon saturation of silicon target under the action of pulsed high-intensity ion beam _fN. E. Aktaev, G. E. Remnev |
|
| 203 |
_aText _celectronic |
||
| 300 | _aTitle screen | ||
| 320 | _a[References: 9 tit.] | ||
| 330 | _aThe action of the pulsed high-intensity ion (carbon) beam on the silicon target is investigated by means of the theoretical model. The forming of the carbon concentration profile in depth of the silicon sample is modelled. It is argued, that there are two ways of the profile forming: short-pulsed ion (carbon) implantation and diffusion of the carbon atoms adsorbed on the silicon surface. It is shown, that the carbon atoms adsorbed on the silicon surface and diffused into the silicon target play the main role in the concentration profile forming. | ||
| 333 | _aРежим доступа: по договору с организацией-держателем ресурса | ||
| 461 | 0 |
_0(RuTPU)RU\TPU\network\2008 _tIOP Conference Series: Materials Science and Engineering |
|
| 463 | 0 |
_0(RuTPU)RU\TPU\network\11965 _tVol. 110 : Radiation-Thermal Effects and Processes in Inorganic Materials (RTEP2015) _oInternational Scientific Conference, 31 August to 10 September 2015, Tomsk, Russia _o[proceedings] _v[012054, 9 p.] _d2016 |
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| 610 | 1 | _aэлектронный ресурс | |
| 610 | 1 | _aтруды учёных ТПУ | |
| 610 | 1 | _aнасыщение | |
| 610 | 1 | _aуглерод | |
| 610 | 1 | _aкремниевые мишени | |
| 610 | 1 | _aимпульсные пучки | |
| 610 | 1 | _aионные пучки | |
| 610 | 1 | _aкремний | |
| 610 | 1 | _aповерхности | |
| 700 | 1 |
_aAktaev _bN. E. _cphysicist _cresearch engineer of Tomsk Polytechnic University, Candidate of physical and mathematical sciences _f1985- _gNurken Erbolatovich _2stltpush _3(RuTPU)RU\TPU\pers\33514 |
|
| 701 | 1 |
_aRemnev _bG. E. _cphysicist _cProfessor of Tomsk Polytechnic University, Doctor of technical sciences _f1948- _gGennady Efimovich _2stltpush _3(RuTPU)RU\TPU\pers\31500 |
|
| 712 | 0 | 2 |
_aНациональный исследовательский Томский политехнический университет (ТПУ) _bИнститут физики высоких технологий (ИФВТ) _bЛаборатория № 1 _h6378 _2stltpush _3(RuTPU)RU\TPU\col\19035 |
| 801 | 2 |
_aRU _b63413507 _c20161121 _gRCR |
|
| 856 | 4 | _uhttp://dx.doi.org/10.1088/1757-899X/110/1/012054 | |
| 856 | 4 | 0 | _uhttp://earchive.tpu.ru/handle/11683/18076 |
| 942 | _cCF | ||