000 01823nlm0a2200337 4500
001 648003
005 20231030040821.0
035 _a(RuTPU)RU\TPU\network\13160
090 _a648003
100 _a20160504a2009 k y0engy50 ca
101 0 _aeng
105 _aa z 101zy
135 _adrnn ---uucaa
181 0 _ai
182 0 _ab
200 1 _aResearch of the creation opportunity of matrix X-ray gallium arsenide detector
_fD. G. Prokopyev [et al.]
203 _aText
_celectronic
300 _aTitle screen
320 _a[References: р. 188 (4 tit.)]
330 _aPreliminary accounts and experiments for clarification of the creation opportunity of matrix X-ray gallium arsenide detector with embed electronics were made. It is revealed, that efficiency of charge collection in this detector will be higher than the selenium prototype. Also it is revealed, that detector channel resistance can exceed 1000 GOhm, and storage capacitor and transistor closed channel resistance can be made higher than 100 GOhm that is essential and sufficient for proper circuit work.
333 _aРежим доступа: по договору с организацией-держателем ресурса
463 _tInternational Siberian Conference on Control and Communications (SIBCON-2009), Russia, Tomsk, March 27−28, 2009
_oproceedings
_v[P. 185-188]
_d2009
610 1 _aэлектронный ресурс
610 1 _aтруды учёных ТПУ
701 1 _aProkopyev
_bD. G.
701 1 _aLelekov
_bM. A.
701 1 _aDuchko
_bA. N.
_cmathematician
_cAssistant of Tomsk Polytechnic University
_f1990-
_gAndrey Nikolaevich
_2stltpush
_3(RuTPU)RU\TPU\pers\32998
701 1 _aYushenko
_bA. Y.
801 2 _aRU
_b63413507
_c20160504
_gRCR
856 4 _uhttp://dx.doi.org/10.1109/SIBCON.2009.5044853
942 _cCF