| 000 | 03138nlm1a2200349 4500 | ||
|---|---|---|---|
| 001 | 648222 | ||
| 005 | 20231030040829.0 | ||
| 035 | _a(RuTPU)RU\TPU\network\13379 | ||
| 090 | _a648222 | ||
| 100 | _a20160513a2009 k y0engy50 ba | ||
| 101 | 0 | _aeng | |
| 102 | _aNL | ||
| 135 | _adrcn ---uucaa | ||
| 181 | 0 | _ai | |
| 182 | 0 | _ab | |
| 200 | 1 |
_aA “capacitor” model of the hysteresis of tunneling current in w-GaN/AlGaN(0001) structures _d“Конденсаторная” модель гистерезиса туннельного тока в структурах w-GaN/AlGaN(0001) _fA. N. Razzhuvalov, S. N. Grinyaev |
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| 203 |
_aText _celectronic |
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| 225 | 1 | _aLow-Dimensional Systems And Surface Physics | |
| 300 | _aTitle screen | ||
| 320 | _a[References: 18 tit.] | ||
| 330 | _aA “capacitor” model of the hysteresis is developed using the self-consistent calculation of the tunneling current in a w-GaN/AlGaN(0001) double-barrier structure. In the framework of this model, the current jumps and changes in the potential and the electric field in the structure upon transition from one branch of the current loop to the other branch are considered a result of the recharging of two joined capacitors with the plates located at the positions of the extrema of variations in the electron density in the regions of the emitter, the quantum well, and the collector. It is demonstrated that, when the external and internal fields in the quantum well compensate for each other, the tunneling current is sharply and irreducibly switched to the characteristics of the other resonance and forms a wide hysteresis loop so that, in the branches of this loop, the charge is redistributed between the quantum well and the collector. If the fields coincide with each other, there arises a narrow “singleresonance” hysteresis loop, which is accompanied by the transfer of the electron charge from the emitter to the collector. The developed model leads to agreement with the results of the self-consistent calculations and provides an illustrative interpretation of the complex electron tunneling processes. | ||
| 333 | _aРежим доступа: по договору с организацией-держателем ресурса | ||
| 461 |
_tPhysics of the Solid State _oScientific Journal |
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| 463 |
_tVol. 51, iss. 1 _v[P. 189-201] _d2009 |
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| 510 | 1 |
_a“Конденсаторная” модель гистерезиса туннельного тока в структурах w-GaN/AlGaN(0001) _zrus |
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| 610 | 1 | _aэлектронный ресурс | |
| 610 | 1 | _aтруды учёных ТПУ | |
| 700 | 1 |
_aRazzhuvalov _bA. N. _cphysicist _cassociate Professor of Tomsk Polytechnic University, candidate of physico-mathematical Sciences _f1976- _gAlexander Nikolaevich _2stltpush _3(RuTPU)RU\TPU\pers\36680 |
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| 701 | 1 |
_aGrinyaev _bS. N. _cphysicist _cAssociate Professor of Tomsk Polytechnic University, Candidate of physical and mathematical science _f1951- _gSergey Nikolaevich _2stltpush _3(RuTPU)RU\TPU\pers\32574 |
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| 801 | 2 |
_aRU _b63413507 _c20160513 _gRCR |
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| 856 | 4 | _uhttp://dx.doi.org/10.1134/S1063783409010247 | |
| 942 | _cCF | ||