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182		0	_ab
200	1		_aResonant electron tunneling in GaN/Ga1-x AlxN(0001) strained structures with spontaneous polarization and piezoeffec _dРезонансное туннелирование электронов в напряженных структурах GaN/Ga1-xAlxN(0001) с учетом спонтанной поляризации и пьезоэффекта _fS. N. Grinyaev, A. N. Razzhuvalov
203			_aText _celectronic
225	1		_aLow-Dimensional Systems And Surface Physics
300			_aTitle screen
320			_a[References: 36 tit.]
330			_aElectron tunneling through the GaN/Ga1?x AlxN(0001) wurtzite strained structures is investigated by the pseudopotential and scattering matrix methods. It is shown that the results of multiband calculations at low aluminum concentrations (x<0.3) are adequately described within the single-valley model in the envelope wave function method accounting for the dependences of the effective mass on the energy and strain. Upon electron tunneling through two-barrier structures, sharp resonance peaks are observed at a barrier thickness of several monolayers and the characteristic collision time in the resonance region is equal to ?1 ps. The internal electric fields associated with spontaneous and piezoelectric polarizations lead to a “red” or “blue” shift in the resonance energy according to the thickness and location of barriers with respect to the polar axis. In the (GaN)n(Ga1?x AlxN)m superlattices, the internal fields can form the Stark ladder of electronic states at a small number of ultrathin layers even in the absence of external fields.
333			_aРежим доступа: по договору с организацией-держателем ресурса
461			_tPhysics of the Solid State _oScientific Journal
463			_tVol. 43, iss. 3 _v[P. 549-555] _d2001
510	1		_aРезонансное туннелирование электронов в напряженных структурах GaN/Ga1-xAlxN(0001) с учетом спонтанной поляризации и пьезоэффекта _zrus
610	1		_aэлектронный ресурс
610	1		_aтруды учёных ТПУ
700		1	_aGrinyaev _bS. N. _cphysicist _cAssociate Professor of Tomsk Polytechnic University, Candidate of physical and mathematical science _f1951- _gSergey Nikolaevich _2stltpush _3(RuTPU)RU\TPU\pers\32574
701		1	_aRazzhuvalov _bA. N. _cphysicist _cassociate Professor of Tomsk Polytechnic University, candidate of physico-mathematical Sciences _f1976- _gAlexander Nikolaevich _2stltpush _3(RuTPU)RU\TPU\pers\36680
801		2	_aRU _b63413507 _c20160513 _gRCR
856	4		_uhttp://dx.doi.org/10.1134/1.1356136
942			_cCF