| 000 | 02921nlm1a2200361 4500 | ||
|---|---|---|---|
| 001 | 648242 | ||
| 005 | 20231030040830.0 | ||
| 035 | _a(RuTPU)RU\TPU\network\13399 | ||
| 035 | _aRU\TPU\network\13395 | ||
| 090 | _a648242 | ||
| 100 | _a20160513a2003 k y0engy50 ba | ||
| 101 | 0 | _aeng | |
| 102 | _aNL | ||
| 135 | _adrcn ---uucaa | ||
| 181 | 0 | _ai | |
| 182 | 0 | _ab | |
| 200 | 1 |
_aThe effect of internal fields on tunneling current in strained GaN/AlxGa1-x N(0001) structures _dВлияние внутренних полей на туннельный ток в напряженных структурах GaN/AlxGa1-xN(0001) _fS. N. Grinyaev, A. N. Razzhuvalov |
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| 203 |
_aText _celectronic |
||
| 225 | 1 | _aSemiconductor Structures, Interfaces, And Surfaces | |
| 300 | _aTitle screen | ||
| 320 | _a[References: 13 tit.] | ||
| 330 | _aThe influence of internal fields on tunnelling current in w-GaN/AlxGa1?x N(0001) nitride structures with strained barrier layers is investigated by the pseudopotential and scattering-matrix methods. It is shown that, for symmetric two-barrier structures, spontaneous polarization and a piezoelectric field lead to asymmetry of the current-voltage characteristic when the direction of an external field is varied. Moreover, for asymmetric structures these phenomena cause the current to depend on the position of layers along the polar axis. In confined superlattices, internal fields form a Stark ladder of electron states, which manifests itself in current peaks for a relatively weak external field (?10 kV/cm). Pronounced features in the tunnel current are observed for layer thicknesses which are smaller in comparison with the GaAs/AlGaAs(001) structures by a factor of approximately 2. The dependence of tunnel current on the thickness and position of the layers, temperature, and degree of doping are explained from an analysis of the Stark effect for resonance states. | ||
| 333 | _aРежим доступа: по договору с организацией-держателем ресурса | ||
| 461 |
_tSemiconductors _oScientific Journal |
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| 463 |
_tVol. 37, iss. 4 _v[P. 433-438] _d2003 |
||
| 510 | 1 |
_aВлияние внутренних полей на туннельный ток в напряженных структурах GaN/AlxGa1-xN(0001) _zrus |
|
| 610 | 1 | _aэлектронный ресурс | |
| 610 | 1 | _aтруды учёных ТПУ | |
| 700 | 1 |
_aGrinyaev _bS. N. _cphysicist _cAssociate Professor of Tomsk Polytechnic University, Candidate of physical and mathematical science _f1951- _gSergey Nikolaevich _2stltpush _3(RuTPU)RU\TPU\pers\32574 |
|
| 701 | 1 |
_aRazzhuvalov _bA. N. _cphysicist _cassociate Professor of Tomsk Polytechnic University, candidate of physico-mathematical Sciences _f1976- _gAlexander Nikolaevich _2stltpush _3(RuTPU)RU\TPU\pers\36680 |
|
| 801 | 2 |
_aRU _b63413507 _c20160513 _gRCR |
|
| 856 | 4 | _uhttp://dx.doi.org/10.1134/1.1568463 | |
| 942 | _cCF | ||