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090 _a648372
100 _a20160518a2015 k y0engy50 ba
101 1 _aeng
_deng
102 _aRU
135 _adrcn ---uucaa
181 0 _ai
182 0 _ab
200 1 _aLaser generation of XeCl exciplex molecules in a longitudinal repetitively pulsed discharge in a Xe – CsCl mixture
_fA. M. Boychenko, M. S. Klenovskii (Klenovsky)
203 _aText
_celectronic
300 _aTitle screen
330 _aBy using the previously developed kinetic model, we have carried out simulations to study the possibility of laser generation of XeCl exciplex molecules in the working medium based on a mixture of Xe with CsCl vapours, excited by a longitudinal repetitively pulsed discharge. The formation mechanism of exciplex molecules in this mixture is fundamentally different from the formation mechanisms in the traditional mixtures of exciplex lasers. The conditions that make the laser generation possible are discussed. For these conditions, with allowance for available specific experimental conditions of the repetitively pulsed discharge excitation, we have obtained the calculated dependences of the power and efficiency of generation on the reflectivity of mirrors in a laser cavity.
333 _aРежим доступа: по договору с организацией-держателем ресурса
461 _tQuantum Electronics
_d1971-
463 _tVol. 45, № 12
_v[P. 1105-1110]
_d2015
610 1 _aэлектронный ресурс
610 1 _aтруды учёных ТПУ
700 1 _aBoychenko
_bA. M.
_gAleksandr Mikhaylovich
701 1 _aKlenovskii (Klenovsky)
_bM. S.
_cspecialist in the field of electronics
_cJunior research fellow Tomsk Polytechnic University
_f1984-
_gMiron Stanislavovich
_2stltpush
_3(RuTPU)RU\TPU\pers\36126
712 0 2 _aНациональный исследовательский Томский политехнический университет (ТПУ)
_bИнститут неразрушающего контроля (ИНК)
_bКафедра промышленной и медицинской электроники (ПМЭ)
_h64
_2stltpush
_3(RuTPU)RU\TPU\col\18719
801 2 _aRU
_b63413507
_c20160518
_gRCR
856 4 _uhttp://dx.doi.org/10.1070/QE2015v045n12ABEH015859
942 _cCF