| 000 | 02424nlm1a2200361 4500 | ||
|---|---|---|---|
| 001 | 648440 | ||
| 005 | 20231030040837.0 | ||
| 035 | _a(RuTPU)RU\TPU\network\13597 | ||
| 035 | _aRU\TPU\network\13578 | ||
| 090 | _a648440 | ||
| 100 | _a20160520a2010 k y0engy50 ba | ||
| 101 | 0 | _aeng | |
| 135 | _adrcn ---uucaa | ||
| 181 | 0 | _ai | |
| 182 | 0 | _ab | |
| 200 | 1 |
_aEnhanced emission during submillisecond low-energy electron beam generation in a diode with grid-stabilized plasma cathode and open anode plasma boundary _fS. V. Grigor'ev [et al.] |
|
| 203 |
_aText _celectronic |
||
| 300 | _aTitle screen | ||
| 320 | _a[References: p. 161 (4 tit.)] | ||
| 330 | _aWe have experimentally studied the phenomenon of emission enhancement in a gas-filled diode with grid-stabilized plasma cathode and open (mobile) anode plasma boundary at an accelerating voltage of up to 20 kV. As the working gas pressure is increased to p = 10-2 Pa and the longitudinal magnetic field is increased to B z = 20 mT, the current in the accelerating gap exhibits significant growth, sometimes by a factor of two or more. Experimental data show that the most probable mechanism responsible for this effect is ion-induced secondary electron emission from the emitting electrode surface bombarded by ions from plasma generated by the electron beam in the drift space. These ions are accelerated in the space charge layer between the emitting electrode surface and the mobile boundary of the beam-generated (anode) plasma. | ||
| 333 | _aРежим доступа: по договору с организацией-держателем ресурса | ||
| 461 |
_tTechnical Physics Letters _d1975- |
||
| 463 |
_tVol. 36, № 2 _v[P. 350-357] _d2010 |
||
| 610 | 1 | _aэлектронный ресурс | |
| 610 | 1 | _aтруды учёных ТПУ | |
| 701 | 1 |
_aGrigor'ev _bS. V. |
|
| 701 | 1 |
_aDevyatkov _bV. N. |
|
| 701 | 1 |
_aKoval _bN. N. _cspecialist in the field of electronics _cProfessor of Tomsk Polytechnic University, Doctor of technical sciences _f1948- _gNikolay Nikolaevich _2stltpush _3(RuTPU)RU\TPU\pers\34748 |
|
| 701 | 1 |
_aTeresov _bA. D. |
|
| 712 | 0 | 2 |
_aНациональный исследовательский Томский политехнический университет (ТПУ) _c(2009- ) _2stltpush _3(RuTPU)RU\TPU\col\15902 |
| 801 | 2 |
_aRU _b63413507 _c20170414 _gRCR |
|
| 856 | 4 | _uhttp://dx.doi.org/10.1134/S1063785010020203 | |
| 942 | _cCF | ||