| 000 | 03556nlm1a2200397 4500 | ||
|---|---|---|---|
| 001 | 648444 | ||
| 005 | 20231030040837.0 | ||
| 035 | _a(RuTPU)RU\TPU\network\13601 | ||
| 090 | _a648444 | ||
| 100 | _a20160520a2016 k y0engy50 ba | ||
| 101 | 0 | _aeng | |
| 135 | _adrcn ---uucaa | ||
| 181 | 0 | _ai | |
| 182 | 0 | _ab | |
| 200 | 1 |
_aIntervalley scattering of electrons by short-wave phonons in (GaAs)8(AlAs)8(001) superlattice _fS. N. Grinyaev, L. N. Nikitina, V. G. Tyuterev |
|
| 203 |
_aText _celectronic |
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| 300 | _aTitle screen | ||
| 320 | _a[References: p. 289 (15 tit.)] | ||
| 330 | _aIntervalley transitions induced by short-wavelength phonons in the conduction band of a superlattice (GaAs)8(AlAs)8(001) are investigated on the basis of the pseudopotential method and in the phenomenological model of interatomic forces. The main attention in the study centers around the transitions associated with the vibrations confined inside the layers. It is shown that the deformation potentials for the majority of intervalley transitions in a superlattice exceed the potentials of corresponding transitions in the binary crystals because of the localization of atomic displacements and wavefunctions of electrons inside the same layer of the superlattice. | ||
| 330 | _aThe bottom of the conduction band in (GaAs)8(AlAs)8(001) superlattice corresponds to the states View the MathML source, Z3, M1, M4 originating from sphalerite's View the MathML source valleys localized in AlAs layers. Transitions between them are the most intense ones and they are caused by optical vibrations of Al atoms. “Semi-interface” vibrations being mainly localized in the one side of the GaAs layer are involved in the View the MathML source, View the MathML source and X1Z1 transitions which are analogs of View the MathML source transitions in binaries. The transitions View the MathML source and View the MathML source are governed by smooth parts of wave-functions and pseudopotentials. As a consequence their intensities are comparable with those of View the MathML source sphalerite transitions in spite that these states are localized in the different layers of the superlattice. | ||
| 333 | _aРежим доступа: по договору с организацией-держателем ресурса | ||
| 461 |
_tSuperlattices and Microstructures _oScientific Journal |
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| 463 |
_tVol. 93 _v[P. 280-289] _d2016 |
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| 610 | 1 | _aэлектронный ресурс | |
| 610 | 1 | _aтруды учёных ТПУ | |
| 610 | 1 | _aэлектроны | |
| 610 | 1 | _aфотоны | |
| 610 | 1 | _aвзаимодействие | |
| 610 | 1 | _aсверхрешетки | |
| 700 | 1 |
_aGrinyaev _bS. N. _cphysicist _cAssociate Professor of Tomsk Polytechnic University, Candidate of physical and mathematical science _f1951- _gSergey Nikolaevich _2stltpush _3(RuTPU)RU\TPU\pers\32574 |
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| 701 | 1 |
_aNikitina _bL. N. _cphysicist _cassociate Professor of Tomsk Polytechnic University, candidate of physico-mathematical Sciences _f1978- _gLarisa Nikolaevna _2stltpush _3(RuTPU)RU\TPU\pers\36237 |
|
| 701 | 1 |
_aTyuterev _bV. G. _gValery Grigorjevich |
|
| 712 | 0 | 2 |
_aНациональный исследовательский Томский политехнический университет (ТПУ) _bФизико-технический институт (ФТИ) _bКафедра экспериментальной физики (ЭФ) _h7596 _2stltpush _3(RuTPU)RU\TPU\col\21255 |
| 801 | 2 |
_aRU _b63413507 _c20160520 _gRCR |
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| 856 | 4 | _uhttp://dx.doi.org/10.1016/j.spmi.2016.03.008 | |
| 942 | _cCF | ||