| 000 | 03292nlm1a2200421 4500 | ||
|---|---|---|---|
| 001 | 648589 | ||
| 005 | 20231030040843.0 | ||
| 035 | _a(RuTPU)RU\TPU\network\13748 | ||
| 090 | _a648589 | ||
| 100 | _a20160525a2016 k y0engy50 ba | ||
| 101 | 0 | _aeng | |
| 102 | _aNL | ||
| 135 | _adrcn ---uucaa | ||
| 181 | 0 | _ai | |
| 182 | 0 | _ab | |
| 200 | 1 |
_aStabilization of primary mobile radiation defects in MgF2 crystals _fV. M. Lisitsyn [et al.] |
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| 203 |
_aText _celectronic |
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| 300 | _aTitle screen | ||
| 320 | _a[References: 50 tit.] | ||
| 330 | _aNon-radiative decay of the electronic excitations (excitons) into point defects (F–H pairs of Frenkel defects) is main radiation damage mechanism in many ionic (halide) solids. Typical time scale of the relaxation of the electronic excitation into a primary, short-lived defect pair is about 1–50 ps with the quantum yield up to 0.2–0.8. However, only a small fraction of these primary defects are spatially separated and survive after transformation into stable, long-lived defects. The survival probability (or stable defect accumulation efficiency) can differ by orders of magnitude, dependent on the material type; e.g. ?10% in alkali halides with f.c.c. or b.c.c. structure, 0.1% in rutile MgF2 and <0.001% in fluorides MeF2 (Me: Ca, Sr, Ba). The key factor determining accumulation of stable radiation defects is stabilization of primary defects, first of all, highly mobile hole H centers, through their transformation into more complex immobile defects. In this talk, we present the results of theoretical calculations of the migration energies of the F and H centers in poorely studied MgF2 crystals with a focus on the H center stabilization in the form of the interstitial F2 molecules which is supported by presented experimental data. | ||
| 333 | _aРежим доступа: по договору с организацией-держателем ресурса | ||
| 461 |
_tNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms _d1984- |
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| 463 |
_tVol. 374 : Basic Research on Ionic-Covalent Materials _v[P. 24-28] _d2016 |
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| 610 | 1 | _aэлектронный ресурс | |
| 610 | 1 | _aтруды учёных ТПУ | |
| 610 | 1 | _aэкситоны | |
| 610 | 1 | _aрадиационные дефекты | |
| 701 | 1 |
_aLisitsyn _bV. M. _cphysicist _cRussian physicist _cProfessor of Tomsk Polytechnic University, Candidate of physical and mathematical sciences _f1939- _gViktor Mikhailovich _2stltpush _3(RuTPU)RU\TPU\pers\28330 |
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| 701 | 1 |
_aLisitsyna _bL. A. _gLyudmila Aleksandrovna |
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| 701 | 1 |
_aPopov _bA. I. _gAleksandr Ivanovich |
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| 701 | 1 |
_aKotomin _bE. A. _gEvgeny Aleksandrovich |
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| 701 | 1 |
_aAbuova _bF. U. _gFatima Usenovna |
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| 701 | 1 |
_aAkilbekov _bA. T. _gAbdirash Tasanovich |
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| 701 | 1 |
_aMaier _bJ. |
|
| 712 | 0 | 2 |
_aНациональный исследовательский Томский политехнический университет (ТПУ) _bИнститут физики высоких технологий (ИФВТ) _bКафедра лазерной и световой техники (ЛиСТ) _h65 _2stltpush _3(RuTPU)RU\TPU\col\18690 |
| 801 | 2 |
_aRU _b63413507 _c20160525 _gRCR |
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| 856 | 4 | _uhttp://dx.doi.org/10.1016/j.nimb.2015.08.002 | |
| 942 | _cCF | ||