| 000 | 02866nlm1a2200409 4500 | ||
|---|---|---|---|
| 001 | 649104 | ||
| 005 | 20231030040900.0 | ||
| 035 | _a(RuTPU)RU\TPU\network\14265 | ||
| 035 | _aRU\TPU\network\14258 | ||
| 090 | _a649104 | ||
| 100 | _a20160620a2012 k y0engy50 ba | ||
| 101 | 0 | _aeng | |
| 135 | _adrcn ---uucaa | ||
| 181 | 0 | _ai | |
| 182 | 0 | _ab | |
| 200 | 1 |
_aStructure and phase composition of a chromium–silicon system modified by high current electron beams _fV. V. Uglov [et al.] |
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| 203 |
_aText _celectronic |
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| 300 | _aTitle screen | ||
| 320 | _a[References: p. 72 (20 tit.] | ||
| 330 | _aThe results of studies of the structure-phase state of a chromium-coated silicon substrate system’s subsurface layer treated with low-energy high-current electron beams, 50–200 µs in duration and with an energy density of 15 J/cm2, are reported. The data of raster electron microscopy and X-ray structural and spectral microanalysis revealed the formation of a chromium-doped silicon layer with a thickness of 2–38 µm, chromium-enriched silicon dendrites, chromium disilicide CrSi2, and an amorphous eutectic layer (the characteristic cross-section size of the chromium-enriched phase extrusions is ~50 nm). The structure-phase transformations are discussed taking into account the peculiarities of the distribution of temperature, diffusion and convective mass-transfer in the modified layer. | ||
| 333 | _aРежим доступа: по договору с организацией-держателем ресурса | ||
| 461 |
_tJournal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques _d2007- |
||
| 463 |
_tVol. 6, № 1 _v[P. 67-72] _d2012 |
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| 610 | 1 | _aэлектронный ресурс | |
| 610 | 1 | _aтруды учёных ТПУ | |
| 610 | 1 | _aстуктура | |
| 610 | 1 | _aфазовый состав | |
| 610 | 1 | _aхром-кремний | |
| 701 | 1 |
_aUglov _bV. V. _cPhysicist _cLeading researcher of Tomsk Polytechnic University, Doctor of physical and mathematical sciences _f1954- _gVladimir Vasilievich _2stltpush _3(RuTPU)RU\TPU\pers\36737 |
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| 701 | 1 |
_aKvasov _bN. T. _cphysicist _cleading researcher of Tomsk Polytechnic University, Doctor of physical and mathematical sciences _f1949- _gNikolay Trafimovich _2stltpush _3(RuTPU)RU\TPU\pers\36768 |
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| 701 | 1 |
_aPetukhov _bY. A. |
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| 701 | 1 |
_aTeresov _bA. D. |
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| 701 | 1 |
_aKoval _bN. N. _cspecialist in the field of electronics _cProfessor of Tomsk Polytechnic University, Doctor of technical sciences _f1948- _gNikolay Nikolaevich _2stltpush _3(RuTPU)RU\TPU\pers\34748 |
|
| 701 | 1 |
_aIvanov _bYu. F. _cphysicist _cProfessor of Tomsk Polytechnic University, Doctor of physical and mathematical sciences _f1955- _gYuriy Fedorovich _2stltpush _3(RuTPU)RU\TPU\pers\33559 |
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| 801 | 2 |
_aRU _b63413507 _c20210628 _gRCR |
|
| 856 | 4 | _uhttp://dx.doi.org/10.1134/S1027451012010193 | |
| 942 | _cCF | ||