000 | 02569nlm0a2200361 4500 | ||
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001 | 649175 | ||
005 | 20231030040902.0 | ||
035 | _a(RuTPU)RU\TPU\network\14336 | ||
035 | _aRU\TPU\network\13607 | ||
090 | _a649175 | ||
100 | _a20160623a2001 k y0engy50 ba | ||
101 | 0 | _aeng | |
105 | _ay z 100zy | ||
135 | _adrcn ---uucaa | ||
181 | 0 | _ai | |
182 | 0 | _ab | |
200 | 1 |
_aHigh-current low-energy plasma electron sources _fP. M. Schanin, N. N. Koval, V. N. Devyatkov |
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203 |
_aText _celectronic |
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300 | _aTitle screen | ||
330 | _aSummary form given only, as follows. The electron source with plasma cathode based on a low-pressure arc and glow discharge with hollow anode is considered in report. The plasma cathode allows to produce the gas-filled diode that provided more high perveance of diode and beam current then a vacuum diode. In gas-filled diode the electrons extracted from cathode into accelerating gap through a metallic mesh, that stabilizes emission boundary of the cathode plasma, ionize the gas producing anode plasma. The electrons are accelerated in layer which formed between the emission mesh electrode of plasma cathode and plasma anode. The formed beam by diode propagating through a drift tube, that is simultaneously anode of diode, is neutralized by ions plasma and is pinched by self magnetic-field so the current density to the tube end exceeds a few times that at the cathode. The beam current up to 1000 A and current density up to 100 A/cm/sup 2/ were obtained at accelerating voltage of 20 kV and pulse duration of 30 ?s. The self pinched electron beam propagates about 80% of current at distance 50 cm without break off or instabilities if the gas pressure exceeds 1·10/sup -2/ Pa. | ||
333 | _aРежим доступа: по договору с организацией-держателем ресурса | ||
463 |
_tPulsed Power Plasma Science, 2001 IEEE _v[P. 174-175] _oIEEE Conference Record - Abstracts _d2001 |
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610 | 1 | _aэлектронный ресурс | |
610 | 1 | _aтруды учёных ТПУ | |
610 | 1 | _aисточники тока | |
610 | 1 | _aнизкая энергия | |
610 | 1 | _aплазма | |
700 | 1 |
_aSchanin _bP. M. |
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701 | 1 |
_aKoval _bN. N. _cspecialist in the field of electronics _cProfessor of Tomsk Polytechnic University, Doctor of technical sciences _f1948- _gNikolay Nikolaevich _2stltpush _3(RuTPU)RU\TPU\pers\34748 |
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701 | 1 |
_aDevyatkov _bV. N. |
|
801 | 2 |
_aRU _b63413507 _c20161114 _gRCR |
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856 | 4 | _uhttp://dx.doi.org/10.1109/PPPS.2001.960746 | |
942 | _cCF |