| 000 | 03773nlm1a2200457 4500 | ||
|---|---|---|---|
| 001 | 649253 | ||
| 005 | 20231030040905.0 | ||
| 035 | _a(RuTPU)RU\TPU\network\14415 | ||
| 035 | _aRU\TPU\network\10661 | ||
| 090 | _a649253 | ||
| 100 | _a20160627a2014 k y0engy50 ba | ||
| 101 | 0 | _aeng | |
| 102 | _aRU | ||
| 135 | _adrcn ---uucaa | ||
| 181 | 0 | _ai | |
| 182 | 0 | _ab | |
| 200 | 1 |
_aThe effect of a low-energy high-current pulsed electron beam on surface layers of porous zirconium ceramics _fV. P. Surzhikov [et al.] |
|
| 203 |
_aText _celectronic |
||
| 300 | _aTitle screen | ||
| 320 | _a[References: p. 765 (9 tit.)] | ||
| 330 | _aThe effect of a high-current pulsed electron beam of low-energy electrons on surface layers of porous zirconium ceramics has been studied. It is established that electron treatment leads to melting of the surface layer and its subsequent crystallization accompanied by the formation of a microstructure differing from the initial state. It is established that porosity decreases in the treatment region, the size of grains increases, and their shape changes. Grains are found to arrange themselves in the direction to the sample surface. Their linear sizes in the transverse and longitudinal directions are, respectively, 1.4 and 7 μm on average, i.e., differ significantly. It is shown that the surface layer modified by an electron beam is characterized by elevated microhardness as compared with the initial state. | ||
| 333 | _aРежим доступа: по договору с организацией-держателем ресурса | ||
| 461 |
_tTechnical Physics Letters _oScientific Journal |
||
| 463 |
_tVol. 40, iss. 9 _v[P. 762-765] _d2014 |
||
| 610 | 1 | _aэлектронный ресурс | |
| 610 | 1 | _aтруды учёных ТПУ | |
| 610 | 1 | _aповерхностные слои | |
| 610 | 1 | _aмикроструктура | |
| 610 | 1 | _aпористость | |
| 610 | 1 | _aэлектроны | |
| 610 | 1 | _aэлектронные пучки | |
| 610 | 1 | _aкристаллизация | |
| 701 | 1 |
_aSurzhikov _bV. P. _cspecialist in the field of non-destructive testing _csenior researcher of Tomsk Polytechnic University, candidate of physical and mathematical sciences _f1954- _gVladimir Petrovich _2stltpush _3(RuTPU)RU\TPU\pers\34577 |
|
| 701 | 1 |
_aFrangulyan _bТ. S. _cspecialist in the field of electronics, dielectrics and semiconductors _cleading researcher of Tomsk Polytechnic University, candidate of physical and mathematical Sciences _f1940- _gTamara Semenovna _2stltpush _3(RuTPU)RU\TPU\pers\33975 |
|
| 701 | 1 |
_aGhyngazov _bS. A. _cspecialist in the field of electronics _cLeading researcher of Tomsk Polytechnic University, Doctor of technical sciences _f1958- _gSergey Anatolievich _2stltpush _3(RuTPU)RU\TPU\pers\33279 |
|
| 701 | 1 |
_aVasil'ev _bI. P. |
|
| 712 | 0 | 2 |
_aНациональный исследовательский Томский политехнический университет (ТПУ) _bИнститут неразрушающего контроля (ИНК) _bКафедра физических методов и приборов контроля качества (ФМПК) _h68 _2stltpush _3(RuTPU)RU\TPU\col\18709 |
| 712 | 0 | 2 |
_aНациональный исследовательский Томский политехнический университет (ТПУ) _bИнститут неразрушающего контроля (ИНК) _bПроблемная научно-исследовательская лаборатория электроники, диэлектриков и полупроводников (ПНИЛ ЭДиП) _h194 _2stltpush _3(RuTPU)RU\TPU\col\19033 |
| 801 | 2 |
_aRU _b63413507 _c20160808 _gRCR |
|
| 856 | 4 | _uhttp://dx.doi.org/10.1134/S1063785014090144 | |
| 942 | _cCF | ||