| 000 | 03266nlm1a2200361 4500 | ||
|---|---|---|---|
| 001 | 649662 | ||
| 005 | 20231030040920.0 | ||
| 035 | _a(RuTPU)RU\TPU\network\14824 | ||
| 090 | _a649662 | ||
| 100 | _a20160801a2016 k y0engy50 ba | ||
| 101 | 0 | _aeng | |
| 102 | _aUS | ||
| 135 | _adrnn ---uucaa | ||
| 181 | 0 | _ai | |
| 182 | 0 | _ab | |
| 200 | 1 |
_aPulsed cathodoluminescence and Raman spectra of MoS2 and WS2 nanocrystals and their combination MoS2/WS2 produced by self-propagating high-temperature synthesis _fF. E. Bozheev, D. T. Valiev, R. R. Nemkaeva |
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| 203 |
_aText _celectronic |
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| 300 | _aTitle screen | ||
| 320 | _a[References: 36 tit.] | ||
| 330 | _aMolybdenum and tungsten disulfide nanoplates were produced by self-propagating high-temperature synthesis in argon atmosphere. This method provides an easy way to produce MoS2 and WS2 from nanoplates up to single- and several layers. The Raman peak intensities corresponding to in-plane E12g and out-of-plane A1g vibration modes and their shifts strongly depend on the thicknesses of the MoS2 and WS2 platelets indicating size-dependent scaling laws and properties. An electron beam irradiation of MoS2 and WS2powders leads to an occurrence of pulsed cathodoluminescence (PCL) spectra at 575?nm (2.15?eV) and 550?nm (2.25?eV) characteristic to their intrinsic band gaps. For the combination of MoS2 and WS2nanopowders, a PCL shoulder at 430?nm (2.88?eV) was observed, which is explained by the radiative electron-hole recombination at the MoS2/WS2grain boundaries. The luminescence decay kinetics of the MoS2/WS2 nanoplates appears to be slower than for individual MoS2 and WS2 platelets due to a spatial separation of electrons and holes at MoS2/WS2 junction resulting in extension of recombination time. | ||
| 333 | _aРежим доступа: по договору с организацией-держателем ресурса | ||
| 461 |
_tApplied Physics Letters _d1962- |
||
| 463 |
_tVol. 108, iss. 9 _v[093111, 5 p.] _d2016 |
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| 610 | 1 | _aэлектронный ресурс | |
| 610 | 1 | _aтруды учёных ТПУ | |
| 700 | 1 |
_aBozheev _bF. E. _cspecialist in the field of Electrophysics _cengineer-researcher of Tomsk Polytechnic University _f1987- _gFarabi Esimovich _2stltpush _3(RuTPU)RU\TPU\pers\37025 |
|
| 701 | 1 |
_aValiev _bD. T. _cspecialist in the field of lightning engineering _cEngineer of Tomsk Polytechnic University _f1987- _gDamir Talgatovich _2stltpush _3(RuTPU)RU\TPU\pers\33772 |
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| 701 | 1 |
_aNemkaeva _bR. R. _gRenata Ruslanovna |
|
| 712 | 0 | 2 |
_aНациональный исследовательский Томский политехнический университет (ТПУ) _bИнститут физики высоких технологий (ИФВТ) _bЛаборатория № 12 _h6389 _2stltpush _3(RuTPU)RU\TPU\col\19054 |
| 712 | 0 | 2 |
_aНациональный исследовательский Томский политехнический университет (ТПУ) _bИнститут физики высоких технологий (ИФВТ) _bКафедра лазерной и световой техники (ЛиСТ) _h65 _2stltpush _3(RuTPU)RU\TPU\col\18690 |
| 801 | 2 |
_aRU _b63413507 _c20160801 _gRCR |
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| 856 | 4 | _uhttp://dx.doi.org/10.1063/1.4943144 | |
| 942 | _cCF | ||