| 000 | 03438nlm1a2200409 4500 | ||
|---|---|---|---|
| 001 | 649713 | ||
| 005 | 20231030040921.0 | ||
| 035 | _a(RuTPU)RU\TPU\network\14875 | ||
| 090 | _a649713 | ||
| 100 | _a20160803a2016 k y0engy50 ba | ||
| 101 | 0 |
_aeng _deng |
|
| 102 | _aUS | ||
| 135 | _adrcn ---uucaa | ||
| 181 | 0 | _ai | |
| 182 | 0 | _ab | |
| 200 | 1 |
_aZirconia-based solid electrolyte obtained by tape casting _fO. V. Tiunova [et al.] |
|
| 203 |
_aText _celectronic |
||
| 300 | _aTitle screen | ||
| 320 | _a[References: 20 tit.] | ||
| 330 | _aThe possibility of using tape casting to produce solid electrolyte films with a thickness of 100–300 ?m from zirconia stabilized with oxides of scandium and cerium is considered. A method of slip casting onto a moving tape is used to produce rather thin ceramic sheets with a thickness of less than 1 mm. An organic slip based on azeotropic mixture of isopropyl alcohol and methyl ethyl ketone is used in the present work. The effect of solvents on the properties of the obtained film and sintered ceramic is analyzed. Dibutylphthalate, polyethylene glycol, and benzyl butylphthalate are used as plasticizers. The effectiveness of these plasticizers is based on the possibility of producing a slip with a viscosity of 2000–4000 mPa s by using them. Polyvinyl butyral appears to be the most optimal temporary binder, because it is satisfactorily removed in a continuous mode of annealing of plated ceramic blanks. The maximum density of ceramic plates is achieved at the annealing temperature of 1500°C. It is shown that the working range of the obtained solid electrolyte is 800–850°C, as the maximum ionic conductivity (more than 0.15 ??1 cm?1) is registered in it. | ||
| 333 | _aРежим доступа: по договору с организацией-держателем ресурса | ||
| 461 |
_tInorganic Materials: Applied Research _d2010- |
||
| 463 |
_tVol. 7, iss. 2 _v[P. 278-284] _d2016 |
||
| 610 | 1 | _aэлектронный ресурс | |
| 610 | 1 | _aтруды учёных ТПУ | |
| 610 | 1 | _aдиоксид циркония | |
| 610 | 1 | _aскандий | |
| 610 | 1 | _aцерий | |
| 701 | 1 |
_aTiunova _bO. V. _gOlga Vasiljevna |
|
| 701 | 1 |
_aKhabas (Habas) _bT. A. _cchemist _cProfessor of Tomsk Polytechnic University, Doctor of chemical science _f1949- _gTamara Andreevna _2stltpush _3(RuTPU)RU\TPU\pers\31273 |
|
| 701 | 1 |
_aBredikhin _bS. I. _gSergey Ivanovich |
|
| 701 | 1 |
_aKuritsina _bI. E. _gIrina Evgenjevna |
|
| 712 | 0 | 2 |
_aНациональный исследовательский Томский политехнический университет (ТПУ) _bИнститут неразрушающего контроля (ИНК) _bПроблемная научно-исследовательская лаборатория электроники, диэлектриков и полупроводников (ПНИЛ ЭДиП) _h194 _2stltpush _3(RuTPU)RU\TPU\col\19033 |
| 712 | 0 | 2 |
_aНациональный исследовательский Томский политехнический университет (ТПУ) _bИнститут неразрушающего контроля (ИНК) _bКафедра физических методов и приборов контроля качества (ФМПК) _h68 _2stltpush _3(RuTPU)RU\TPU\col\18709 |
| 801 | 2 |
_aRU _b63413507 _c20160803 _gRCR |
|
| 856 | 4 | _uhttp://dx.doi.org/10.1134/S2075113316020222 | |
| 942 | _cCF | ||