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090 _a651252
100 _a20161108a2016 k z0engy50 ba
101 1 _aeng
102 _aHR
135 _aarcn ---uucaa
181 0 _ai
182 0 _ab
200 1 _aOxygen activity changing when simulating silicon filtering process
_fA. D. Mekhtiev [et al.]
203 _aText
_celectronic
320 _a[References.: p. 496 (6 tit.)]
330 _aIn the article there is considered the efficiency of using filters for the refinement of metal melts, the use of filters in metallurgical practice and research of the inoculating mechanism of filter refinement of a metal melt from the dissolved impurities. In the inoculating mechanism the surface of the filter serves as a substrate for separation on it thenonmetallic phase directly from the melt, passing the stage of its separation into an isolated particle. This is proved experimentally, by monitoring the change of the deleted impurity activity by the EMF (electromotive force) method.
333 _aРежим доступа: по договору с организацией-держателем ресурса
461 _tMetalurgija
463 _tVol. 55, № 3
_v[P. 493-496]
_d2016
610 1 _aтруды учёных ТПУ
610 1 _aэлектронный ресурс
701 1 _aMekhtiyev (Mekhtiev)
_bA.
_cSpecialist in the field of electronics
_cSenior researcher of Tomsk Polytechnic University, Candidate of technical sciences
_f1972-
_gAli
_2stltpush
_3(RuTPU)RU\TPU\pers\39786
701 1 _aZholdubaeva
_bZ. Kh.
701 1 _aIssin
_bB. D.
701 1 _aGolovacheva
_bV. N.
701 1 _aYurchenko
_bA. V.
_cphysicist
_cProfessor of Tomsk Polytechnic University, candidate of technical sciences
_f1974-
_gAleksey Vasilievich
_2stltpush
_3(RuTPU)RU\TPU\pers\35053
701 1 _aIssin
_bD. K.
712 0 2 _aНациональный исследовательский Томский политехнический университет (ТПУ)
_bИнститут неразрушающего контроля (ИНК)
_bКафедра физических методов и приборов контроля качества (ФМПК)
_h68
_2stltpush
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801 0 _aRU
_b63413507
_c20011210
_gPSBO
801 2 _aRU
_b63413507
_c20190704
_gPSBO
856 4 _uhttp://hrcak.srce.hr/index.php?show=clanak&id_clanak_jezik=226428
942 _cCF