| 000 | 03714nla2a2200517 4500 | ||
|---|---|---|---|
| 001 | 651359 | ||
| 005 | 20231030041031.0 | ||
| 035 | _a(RuTPU)RU\TPU\network\16608 | ||
| 035 | _aRU\TPU\network\16605 | ||
| 090 | _a651359 | ||
| 100 | _a20161110a2016 k y0engy50 ba | ||
| 101 | 0 | _aeng | |
| 105 | _ay z 100zy | ||
| 135 | _adrgn ---uucaa | ||
| 181 | 0 | _ai | |
| 182 | 0 | _ab | |
| 200 | 1 |
_aEffects of Doped Oxygen on ZnWO[4] Crystal Luminescence _fV. M. Lisitsyn [et al.] |
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| 203 |
_aText _celectronic |
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| 225 | 1 | _aMaterials and Technologies in Optoelectronics Production | |
| 300 | _aTitle screen | ||
| 330 | _aThe results of the study of the spectral characteristics and photo cathodoluminescence zinc tungstate crystals subjected to heat treatment in an oxygen atmosphere, or flows of high-energy irradiation of oxygen ions. It was observed that additional introduction of oxygen leads to decline in luminescence’s effectiveness. It was discovered, that introduction of oxygen by thermal processing leads to changes in excitation spectrum. Decline of excitation effectiveness proportional to increase of excitation quanta energy from 4.5 to 6.5 eV was observed; in the meantime, in the unprocessed crystals it declined by only 25-30%. The effect can be explained by destruction of complex defects with luminescence centers during introduction of additional oxygen. It was demonstrated, that characteristic oxygen’s depth of entry during thermal processing is 20 nm. | ||
| 333 | _aРежим доступа: по договору с организацией-держателем ресурса | ||
| 461 | 0 |
_0(RuTPU)RU\TPU\network\11477 _tKey Engineering Materials _oScientific Journal |
|
| 463 | 0 |
_0(RuTPU)RU\TPU\network\16425 _tVol. 712 : Advanced Materials for Technical and Medical Purpose (AMTMP 2016) _oThe Workshop , February 15-17, 2016, Tomsk, Russia _o[proceedings] _fNational Research Tomsk Polytechnic University (TPU) ; eds. G. E. Osokin [et al.] _v[P. 345-350] _d2016 |
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| 610 | 1 | _aэлектронный ресурс | |
| 610 | 1 | _aтруды учёных ТПУ | |
| 610 | 1 | _aлегирование | |
| 610 | 1 | _aкислород | |
| 610 | 1 | _aкристаллы | |
| 610 | 1 | _aлюминесценция | |
| 610 | 1 | _aдефекты | |
| 610 | 1 | _aкатодолюминесценция | |
| 610 | 1 | _aнанодефекты | |
| 610 | 1 | _aвольфрамат цинка | |
| 701 | 1 |
_aLisitsyn _bV. M. _cphysicist _cRussian physicist _cProfessor of Tomsk Polytechnic University, Candidate of physical and mathematical sciences _f1939- _gViktor Mikhailovich _2stltpush _3(RuTPU)RU\TPU\pers\28330 |
|
| 701 | 1 |
_aKaripbayev _bZ. T. _gZhakyp |
|
| 701 | 1 |
_aLisitsyna _bL. A. _gLudmila |
|
| 701 | 1 |
_aDauletbekova _bA. K. _gAlma |
|
| 701 | 1 |
_aTupitsyna _bI. A. _gIrina |
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| 701 | 1 |
_aAkilbekov _bA. T. _gAbdirash |
|
| 701 | 1 |
_aZdorovets _bM. V. _gMaxim |
|
| 712 | 0 | 2 |
_aНациональный исследовательский Томский политехнический университет (ТПУ) _bИнститут физики высоких технологий (ИФВТ) _bКафедра лазерной и световой техники (ЛиСТ) _h65 _2stltpush _3(RuTPU)RU\TPU\col\18690 |
| 712 | 0 | 2 |
_aНациональный исследовательский Томский политехнический университет (ТПУ) _bИнститут физики высоких технологий (ИФВТ) _bКафедра материаловедения и технологии металлов (МТМ) _h73 _2stltpush _3(RuTPU)RU\TPU\col\18689 |
| 801 | 2 |
_aRU _b63413507 _c20170120 _gRCR |
|
| 856 | 4 | _uhttp://dx.doi.org/10.4028/www.scientific.net/KEM.712.345 | |
| 942 | _cCF | ||