| 000 | 03011nlm1a2200385 4500 | ||
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| 001 | 652332 | ||
| 005 | 20231030041135.0 | ||
| 035 | _a(RuTPU)RU\TPU\network\17616 | ||
| 035 | _aRU\TPU\network\17588 | ||
| 090 | _a652332 | ||
| 100 | _a20161219a2014 k y0engy50 ba | ||
| 101 | 0 | _aeng | |
| 135 | _adrcn ---uucaa | ||
| 181 | 0 | _ai | |
| 182 | 0 | _ab | |
| 200 | 1 |
_aThe effective anode-cathode gap in an ion diode operating in a bipolar-pulse regime _fA. I. Pushkarev, Yu. I. Isakova, I. P. Khailov |
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| 203 |
_aText _celectronic |
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| 300 | _aTitle screen | ||
| 320 | _a[References: p. 548 (11 tit.)] | ||
| 330 | _aThe effective anode-cathode gap (ACG) in a self-magnetically insulated ion diode operating in a double (bipolar) pulse regime has been studied. In this diode, the ACG is bounded by a plasma layer at the anode surface and by electrons drifting near the cathode surface. Analysis of the system operation showed that, during the first voltage pulse, the effective ACG decreases at a constant velocity of 1.5 ± 0.1 cm/µs from 9 to 1–2 mm (depending on the pulse duration) and is not completely bridged by plasma. After reversal of the voltage polarity, the effective gap width is restored for 10–20 ns on a nearly initial level. During the second pulse, electrons drift within a 1- to 1.5-mm-thick layer near the anode, while the thickness of a plasma layer on the anode surface does not exceed 0.5 mm. | ||
| 333 | _aРежим доступа: по договору с организацией-держателем ресурса | ||
| 461 |
_tTechnical Physics Letters _oScientific Journal _d1975- |
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| 463 |
_tVol. 40, iss. 7 _v[P. 545-548] _d2014 |
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| 610 | 1 | _aэлектронный ресурс | |
| 610 | 1 | _aтруды учёных ТПУ | |
| 610 | 1 | _aионные диоды | |
| 700 | 1 |
_aPushkarev _bA. I. _cphysicist _cProfessor of Tomsk Polytechnic University, Doctor of physical and mathematical sciences, Senior researcher _f1954- _gAleksandr Ivanovich _2stltpush _3(RuTPU)RU\TPU\pers\32701 |
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| 701 | 1 |
_aIsakova _bYu. I. _cphysicist _cAssociate Scientist of Tomsk Polytechnic University _f1988- _gYulia Ivanovna _2stltpush _3(RuTPU)RU\TPU\pers\32700 |
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| 701 | 1 |
_aKhailov _bI. P. _cphysicist _cEngineer-Researcher of Tomsk Polytechnic University _f1990- _gIliya Pavlovich _2stltpush _3(RuTPU)RU\TPU\pers\32882 |
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| 701 | 1 |
_aIsakova _bYu. I. _cphysicist _cAssociate Scientist of Tomsk Polytechnic University _f1988- _gYulia Ivanovna _2stltpush _3(RuTPU)RU\TPU\pers\32700 |
|
| 701 | 1 |
_aIsakova _bYu. I. _cphysicist _cAssociate Scientist of Tomsk Polytechnic University _f1988- _gYulia Ivanovna _2stltpush _3(RuTPU)RU\TPU\pers\32700 |
|
| 712 | 0 | 2 |
_aНациональный исследовательский Томский политехнический университет (ТПУ) _bИнститут физики высоких технологий (ИФВТ) _2stltpush _3(RuTPU)RU\TPU\col\17233 |
| 801 | 2 |
_aRU _b63413507 _c20170414 _gRCR |
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| 856 | 4 | _uhttp://dx.doi.org/10.1134/S1063785014070098 | |
| 942 | _cCF | ||