| 000 | 02656nlm1a2200337 4500 | ||
|---|---|---|---|
| 001 | 652584 | ||
| 005 | 20231030041145.0 | ||
| 035 | _a(RuTPU)RU\TPU\network\17913 | ||
| 090 | _a652584 | ||
| 100 | _a20170118a2016 k y0engy50 ba | ||
| 101 | 0 | _aeng | |
| 102 | _aUS | ||
| 135 | _adrcn ---uucaa | ||
| 181 | 0 | _ai | |
| 182 | 0 | _ab | |
| 200 | 1 |
_aPeculiarities of tunneling current in w-AlN/GaN(0001) two-barrier structures induced by deep-level defects _fS. N. Grinyaev, A. N. Razzhuvalov |
|
| 203 |
_aText _celectronic |
||
| 300 | _aTitle screen | ||
| 320 | _a[References: 30 tit.] | ||
| 330 | _aThe influence of deep-level defects localized in spacer layers on the tunneling current in a w-AlN/GaN (0001) double-barrier structure is studied. It is shown that the current value essentially depends on the nature and spatial distribution of defects. New effects (screening of built-in fields, negative feedback, fixing of current peaks at high temperature) and a new mechanism of formation of resonances and tunneling current hysteresis caused by deep centers are established. The results of calculation agree with a number of experimental data on the position and temperature dependence of the current peak. It is noted that the current bistability can be caused by multicharged deep centers localized near the heteroboundaries of a double-barrier structure. Due to the defects, electric field in the barriers can reach values, at which the Poole-Frenkel effect should be taken into account. | ||
| 333 | _aРежим доступа: по договору с организацией-держателем ресурса | ||
| 461 | _tJournal of Applied Physics | ||
| 463 |
_tVol. 120, iss. 5 _v[154302, 8 p.] _d2016 |
||
| 610 | 1 | _aэлектронный ресурс | |
| 610 | 1 | _aтруды учёных ТПУ | |
| 700 | 1 |
_aGrinyaev _bS. N. _cphysicist _cAssociate Professor of Tomsk Polytechnic University, Candidate of physical and mathematical science _f1951- _gSergey Nikolaevich _2stltpush _3(RuTPU)RU\TPU\pers\32574 |
|
| 701 | 1 |
_aRazzhuvalov _bA. N. _cphysicist _cassociate Professor of Tomsk Polytechnic University, candidate of physico-mathematical Sciences _f1976- _gAlexander Nikolaevich _2stltpush _3(RuTPU)RU\TPU\pers\36680 |
|
| 712 | 0 | 2 |
_aНациональный исследовательский Томский политехнический университет (ТПУ) _bФизико-технический институт (ФТИ) _bКафедра экспериментальной физики (ЭФ) _h7596 _2stltpush _3(RuTPU)RU\TPU\col\21255 |
| 801 | 2 |
_aRU _b63413507 _c20170118 _gRCR |
|
| 856 | 4 | _uhttp://dx.doi.org/10.1063/1.4964876 | |
| 942 | _cCF | ||