| 000 | 03360nla2a2200505 4500 | ||
|---|---|---|---|
| 001 | 652602 | ||
| 005 | 20231030041146.0 | ||
| 035 | _a(RuTPU)RU\TPU\network\17931 | ||
| 035 | _aRU\TPU\network\17929 | ||
| 090 | _a652602 | ||
| 100 | _a20170119a2016 k y0engy50 ba | ||
| 101 | 0 | _aeng | |
| 105 | _ay z 100zy | ||
| 135 | _adrcn ---uucaa | ||
| 181 | 0 | _ai | |
| 182 | 0 | _ab | |
| 200 | 1 |
_aShort-Range Order and Electronic Properties of Epitaxial Graphene _fN. G. Bobenko [et al.] |
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| 203 |
_aText _celectronic |
||
| 300 | _aTitle screen | ||
| 320 | _a[References: 6 tit.] | ||
| 330 | _aOne of the most rapidly developing areas of modern materials science is the study of graphene and materials on its basis. The experimental investigations have revealed different types of defects on the surface of graphene that form the ordered structures of atomic configurations. In the present work, the value of short-range order parameter for different configurations of foreign atoms in a graphene layer was calculated. The effect of various factors on the density of electronic states and electrical resistance in graphene was also investigated. The type of the ordering of foreign atoms ingraphene rather than the concentration of impurities, was shown to be responsible for the change in the conductivity of graphene. | ||
| 333 | _aРежим доступа: по договору с организацией-держателем ресурса | ||
| 461 | 0 |
_0(RuTPU)RU\TPU\network\4816 _tAIP Conference Proceedings |
|
| 463 | 0 |
_0(RuTPU)RU\TPU\network\17851 _tVol. 1783 : Advanced Materials with Hierarchical Structure for New Technologies and Reliable Structures 2016 _oProceedings of the International conference, 19–23 September 2016, Tomsk, Russia _fNational Research Tomsk Polytechnic University (TPU); eds. V. E. Panin ; S. G. Psakhie ; V. M. Fomin _v[020016, 3 p.] _d2016 |
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| 610 | 1 | _aэлектронный ресурс | |
| 610 | 1 | _aтруды учёных ТПУ | |
| 610 | 1 | _aэлектронные свойства | |
| 610 | 1 | _aграфены | |
| 610 | 1 | _aматериаловедение | |
| 610 | 1 | _aдефекты | |
| 610 | 1 | _aэлектронные состояния | |
| 610 | 1 | _aпроводимость | |
| 701 | 1 |
_aBobenko _bN. G. _cPhysicist _cResearcher of Tomsk Polytechnic University, Doctor of physical and mathematical sciences _f1986- _gNadezhda Georgievna _2stltpush _3(RuTPU)RU\TPU\pers\37783 |
|
| 701 | 1 |
_aEgorushkin _bV. E. |
|
| 701 | 1 |
_aMelnikova _bN. V. |
|
| 701 | 1 |
_aPonomarev _bA. N. _cmathematician _cAssociate Professor of Tomsk Polytechnic University, Candidate of physical and mathematical sciences _f1981- _gAleksey Nikolaevich _2stltpush _3(RuTPU)RU\TPU\pers\38721 |
|
| 701 | 1 |
_aBelosludtseva _bA. A. |
|
| 701 | 1 |
_aBarkalov _bL. D. |
|
| 701 | 1 |
_aLatyshev _bA. M. |
|
| 701 | 1 |
_aIstomina _bE. B. |
|
| 701 | 1 |
_aBobenko _bA. V. |
|
| 712 | 0 | 2 |
_aНациональный исследовательский Томский политехнический университет (ТПУ) _bИнститут международного образования и языковой коммуникации (ИМОЯК) _bКафедра междисциплинарная (МД) _h3526 _2stltpush _3(RuTPU)RU\TPU\col\19012 |
| 801 | 2 |
_aRU _b63413507 _c20170602 _gRCR |
|
| 856 | 4 | _uhttp://dx.doi.org/10.1063/1.4966309 | |
| 942 | _cCF | ||