000 | 03157nlm0a2200397 4500 | ||
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001 | 652760 | ||
005 | 20231030041153.0 | ||
035 | _a(RuTPU)RU\TPU\network\18098 | ||
090 | _a652760 | ||
100 | _a20170125a2012 k y0engy50 ba | ||
101 | 0 | _aeng | |
105 | _ay z 100zy | ||
135 | _adrcn ---uucaa | ||
181 | 0 | _ai | |
182 | 0 | _ab | |
200 | 1 |
_aA pulsed optical absorption spectroscopy study of wide band-gap optical materials _fI. N. Ogorodnikov, M. S. Kiseleva, V. Yu. Yakovlev |
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203 |
_aText _celectronic |
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300 | _aTitle screen | ||
320 | _a[References: 22 tit.] | ||
330 | _aThe paper presents the results of a study on the formation and evolution of short-lived radiation-induced defects in wide band-gap optical materials with the mobile cations. The spectra and decay kinetics of transient optical absorption (TOA) of radiation defects in crystals of potassium and ammonium dihydro phosphates (KH2PO4 and NH4H2PO4) were studied by means of the method of pulsed optical absorption spectroscopy with the nanosecond time resolution under excitation with an electron-beam (250 keV, 10 ns). A model of electron tunneling between the electron and hole centers under conditions of the thermally stimulated mobility of one of the recombination process partners was developed. The model describes all the features of the induced optical density relaxation kinetics observed in nonlinear optical crystals KH2PO4 and NH4H2PO4 in a broad decay-time range of 10 ns–10 s after the pulse of radiation exposure. The paper discusses the origin of radiation defects that determine the TOA, as well as the dependence of the decay kinetics of the TOA on the temperature, excitation power and other experimental conditions. | ||
333 | _aРежим доступа: по договору с организацией-держателем ресурса | ||
461 | _tOptical Materials | ||
463 |
_tVol. 34, iss. 12 : Selected papers from the Third International Workshop on Advanced Spectroscopy and Optical Materials _v[P. 2030-2034] _d2012 |
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610 | 1 | _aэлектронный ресурс | |
610 | 1 | _aтруды учёных ТПУ | |
610 | 1 | _aспектроскопия | |
610 | 1 | _aвременное разрешение | |
610 | 1 | _aлюминесцентные материалы | |
610 | 1 | _aоптическое поглощение | |
700 | 1 |
_aOgorodnikov _bI. N. _gIgor Nikolaevich |
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701 | 1 |
_aKiseleva _bM. S. _gMariya Sergeevna |
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701 | 1 |
_aYakovlev _bV. Yu. _cspecialist in the field of lightning engineering _cProfessor of Tomsk Polytechnic University, Doctor of physical and mathematical sciences _f1949- _gViktor Yurjevich _2stltpush _3(RuTPU)RU\TPU\pers\35728 |
|
712 | 0 | 2 |
_aНациональный исследовательский Томский политехнический университет (ТПУ) _bИнститут физики высоких технологий (ИФВТ) _bКафедра сильноточной электроники (СЭ) _h2047 _2stltpush _3(RuTPU)RU\TPU\col\18691 |
801 | 2 |
_aRU _b63413507 _c20170206 _gRCR |
|
856 | 4 | _uhttp://dx.doi.org/10.1016/j.optmat.2012.03.010 | |
942 | _cCF |