| 000 | 02964nla2a2200445 4500 | ||
|---|---|---|---|
| 001 | 652984 | ||
| 005 | 20231030041203.0 | ||
| 035 | _a(RuTPU)RU\TPU\network\18355 | ||
| 035 | _aRU\TPU\network\18351 | ||
| 090 | _a652984 | ||
| 100 | _a20170202a2017 k y0engy50 ba | ||
| 101 | 0 | _aeng | |
| 105 | _ay z 100zy | ||
| 135 | _adrcn ---uucaa | ||
| 181 | 0 | _ai | |
| 182 | 0 | _ab | |
| 200 | 1 |
_aUse of a thin liquid film moving under the action of gas flow in a mini-channel for removing high heat fluxes _fD. V. Zaitsev [et al.] |
|
| 203 |
_aText _celectronic |
||
| 300 | _aTitle screen | ||
| 320 | _a[References: 10 tit.] | ||
| 330 | _aIntensively evaporating liquid films shear-driven in a mini- or micro-channel under the action of cocurrent gas flow are promising for the use in modern cooling systems of semiconductor devices. In this work, we investigated the influence of liquid and gas flow rates on the critical heat flux in a locally heated film of water, moving under the action of air flow in a mini-channel. In experiments a record value of critical heat flux of 870 W/cm{2} was reached. Heat spreading into the substrate and heat losses to the atmosphere in total do not exceed 25 % at heat fluxes above 400 W/cm{2} . A comparison with the critical heat flux for water flow boiling in the channel shows that, for shear-driven liquid films the critical heat flux is almost an order of magnitude higher. | ||
| 461 | 0 |
_0(RuTPU)RU\TPU\network\4526 _tMATEC Web of Conferences |
|
| 463 | 0 |
_0(RuTPU)RU\TPU\network\18128 _tVol. 92 : Thermophysical Basis of Energy Technologies (TBET-2016) _oProceedings of the Conference, October 26-28, 2016, Tomsk, Russia _fNational Research Tomsk Polytechnic University (TPU) ; eds. G. V. Kuznetsov ; P. A. Strizhak ; A. O. Zhdanova _v[01037, 4 p.] _d2017 |
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| 610 | 1 | _aэлектронный ресурс | |
| 610 | 1 | _aтруды учёных ТПУ | |
| 610 | 1 | _aтонкие пленки | |
| 610 | 1 | _aжидкости | |
| 610 | 1 | _aпотоки газов | |
| 610 | 1 | _aтепловые потоки | |
| 610 | 1 | _aохлаждение | |
| 610 | 1 | _aполупроводниковые приборы | |
| 701 | 1 |
_aZaitsev _bD. V. _cphysicist _cresearcher of Tomsk Polytechnic University, candidate of physical and mathematical sciences _f1974- _gDmitry Valerievich _2stltpush _3(RuTPU)RU\TPU\pers\36024 |
|
| 701 | 1 |
_aTkachenko _bE. _gEgor |
|
| 701 | 1 |
_aOrlik _bE. _gEvgeny |
|
| 701 | 1 |
_aKabov _bO. _gOleg |
|
| 712 | 0 | 2 |
_aНациональный исследовательский Томский политехнический университет (ТПУ) _bЭнергетический институт (ЭНИН) _bКафедра атомных и тепловых электростанций (АТЭС) _h118 _2stltpush _3(RuTPU)RU\TPU\col\18683 |
| 801 | 2 |
_aRU _b63413507 _c20170213 _gRCR |
|
| 856 | 4 | _uhttp://dx.doi.org/10.1051/matecconf/20179201037 | |
| 856 | 4 | _uhttp://earchive.tpu.ru/handle/11683/36692 | |
| 942 | _cCF | ||