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| 001 | 654299 | ||
| 005 | 20231030041255.0 | ||
| 035 | _a(RuTPU)RU\TPU\network\19893 | ||
| 035 | _aRU\TPU\network\19667 | ||
| 090 | _a654299 | ||
| 100 | _a20170424a2013 k y0engy50 ba | ||
| 101 | 0 | _aeng | |
| 102 | _aUS | ||
| 135 | _adrcn ---uucaa | ||
| 181 | 0 | _ai | |
| 182 | 0 | _ab | |
| 200 | 1 |
_aEffect of surface modification by silicon ion beam on microstructure and chemical composition of near-surface layers of titanium nickelide _fS. G. Psakhie [et al.] |
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| 203 |
_aText _celectronic |
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| 300 | _aTitle screen | ||
| 320 | _a[References: p. 462-463 (19 tit.)] | ||
| 330 | _aRegularities of changes in chemical composition and microstructure of titanium nickelide upon high-dose ion-beam implantation of silicon into its surface were studied. It was shown that irradiation of a TiNi alloy with silicon ion beams results in formation of a surface oxide layer about six times thicker than that at the surface of the unirradiated alloy. The surface oxide layer of the ion-beam-modified alloy has an oxygen concentration which is ~20% greater than that of the unmodified TiNi surface layer and lacks nickel, whose concentration is near zero to a sample depth of about 20 nm. Investigation of the near-surface region beneath the irradiated surface of TiNi samples by electron backscatter diffraction revealed that, under the action of a silicon ion beam, the near-surface region of individual B2-phase grains rising to the surface is fragmented with formation of a grain-subgrain structure with fragment (grain) sizes decreased down to 5 to 15 µm. It was suggested that grain orientation influences the observed effect. | ||
| 333 | _aРежим доступа: по договору с организацией-держателем ресурса | ||
| 461 |
_tInorganic Materials: Applied Research _d2010- |
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| 463 |
_tVol. 4, iss. 5 _v[P. 457-463] _d2013 |
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| 610 | 1 | _aэлектронный ресурс | |
| 610 | 1 | _aтруды учёных ТПУ | |
| 610 | 1 | _aтитан | |
| 610 | 1 | _aповерхность | |
| 610 | 1 | _aкремний | |
| 610 | 1 | _aмодификации | |
| 610 | 1 | _aдифракция | |
| 610 | 1 | _aфрагментация | |
| 701 | 1 |
_aPsakhie _bS. G. _cphysicist _chead of laboratory, Advisor to the rector, head of Department, Tomsk Polytechnic University, doctor of physico-mathematical Sciences _f1952- _gSergey Grigorievich _2stltpush _3(RuTPU)RU\TPU\pers\33038 |
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| 701 | 1 |
_aLotkov _bA. I. |
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| 701 | 1 |
_aMeisner _bS. N. |
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| 701 | 1 |
_aMeisner _bL. L. |
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| 701 | 1 |
_aSergeev _bV. P. _cspecialist in the field of materials science _cProfessor of Tomsk Polytechnic University, doctor of technical Sciences _f1949- _gViktor Petrovich _2stltpush _3(RuTPU)RU\TPU\pers\32730 |
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| 701 | 1 |
_aSungatulin _bA. R. |
|
| 712 | 0 | 2 |
_aНациональный исследовательский Томский политехнический университет (ТПУ) _bИнститут физики высоких технологий (ИФВТ) _bКафедра физики высоких технологий в машиностроении (ФВТМ) _h2087 _2stltpush _3(RuTPU)RU\TPU\col\18687 |
| 801 | 2 |
_aRU _b63413507 _c20170424 _gRCR |
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| 856 | 4 | _uhttp://dx.doi.org/10.1134/S2075113313050134 | |
| 942 | _cCF | ||