| 000 | 03112nla2a2200469 4500 | ||
|---|---|---|---|
| 001 | 654889 | ||
| 005 | 20231030041319.0 | ||
| 035 | _a(RuTPU)RU\TPU\network\20602 | ||
| 035 | _aRU\TPU\network\20600 | ||
| 090 | _a654889 | ||
| 100 | _a20170526a2017 k y0engy50 ba | ||
| 101 | 0 | _aeng | |
| 105 | _ay z 100zy | ||
| 135 | _adrgn ---uucaa | ||
| 181 | 0 | _ai | |
| 182 | 0 | _ab | |
| 200 | 1 |
_aEffect of emission on subnanosecond breakdown in a gas diode at low pressure _fE. Kh. Baksht [et al.] |
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| 203 |
_aText _celectronic |
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| 225 | 1 | _aHigh-current electronics | |
| 300 | _aTitle screen | ||
| 320 | _a[References: 11 tit.] | ||
| 330 | _aThe paper presents experimental and numerical research results on the operation of gas diode at low pressure. A high dispersion in the runaway electron beam current (from 20 to 100 A) with respect to the average one (~50 A) is observed for a tubular cathode with a working edge radius of 30 [mu]m, nitrogen pressure of 30 Torr, and an interelectrode gap of 6 mm. Numerical simulation data show that the low beam current (~20 A) is due to the early electron emission from the cathode (at the stage of low-voltage prepulse), in which the runaway electron beam is formed from the boundary of plasma layer developing early in the breakdown. The high beam current (~100 A) is due to the delayed electron emission from the cathode, which increases the diode voltage and the runaway electron beam current. In the latter case, the runaway electron beam is formed directly at the cathode. | ||
| 461 | 0 |
_0(RuTPU)RU\TPU\network\3526 _tJournal of Physics: Conference Series |
|
| 463 | 0 |
_0(RuTPU)RU\TPU\network\20593 _tVol. 830 : Energy Fluxes and Radiation Effects 2016 _o5th International Congress, 2–7 October 2016, Tomsk, Russian Federation _o[materials] _fNational Research Tomsk Polytechnic University (TPU) ; eds. M. V. Trigub G. E. Osokin ; A. S. Konovod _v[012014, 6 p.] _d2017 |
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| 610 | 1 | _aэлектронный ресурс | |
| 610 | 1 | _aтруды учёных ТПУ | |
| 610 | 1 | _aизлучения | |
| 610 | 1 | _aпробой | |
| 610 | 1 | _aгазовые диоды | |
| 610 | 1 | _aнизкое давление | |
| 610 | 1 | _aэмиссия | |
| 610 | 1 | _aэлектронные пучки | |
| 701 | 1 |
_aBaksht _bE. Kh. |
|
| 701 | 1 |
_aBelomyttsev _bS. Ya. |
|
| 701 | 1 |
_aBurachenko _bA. G. |
|
| 701 | 1 |
_aGrishkov _bA. A. |
|
| 701 | 1 |
_aShklyaev _bV. A. _celectrophysicist _cengineer of Tomsk Polytechnic University _f1977- _gValeriy Aleksandrovich _2stltpush _3(RuTPU)RU\TPU\pers\35974 |
|
| 712 | 0 | 2 |
_aНациональный исследовательский Томский политехнический университет (ТПУ) _bИнститут физики высоких технологий (ИФВТ) _bКафедра высоковольтной электрофизики и сильноточной электроники (ВЭСЭ) _h7624 _2stltpush _3(RuTPU)RU\TPU\col\22618 |
| 801 | 2 |
_aRU _b63413507 _c20170620 _gRCR |
|
| 856 | 4 | _uhttp://dx.doi.org/10.1088/1742-6596/830/1/012014 | |
| 856 | 4 | _uhttp://earchive.tpu.ru/handle/11683/39515 | |
| 942 | _cCF | ||