| 000 | 02757nlm1a2200397 4500 | ||
|---|---|---|---|
| 001 | 655600 | ||
| 005 | 20231030041352.0 | ||
| 035 | _a(RuTPU)RU\TPU\network\21842 | ||
| 035 | _aRU\TPU\network\21841 | ||
| 090 | _a655600 | ||
| 100 | _a20170918a1996 k y0engy50 ba | ||
| 101 | 0 | _aeng | |
| 102 | _aUS | ||
| 135 | _adrnn ---uucaa | ||
| 181 | 0 | _ai | |
| 182 | 0 | _ab | |
| 200 | 1 |
_aFormation of near-defect excitons in alkali-halide crystals _fV. I. Korepanov, V. M. Lisitsyn, L. A. Lisitsyna |
|
| 203 |
_aText _celectronic |
||
| 300 | _aTitle screen | ||
| 320 | _a[Ref.: p. 1091-1092 (46 tit.)] | ||
| 330 | _aPulsed-spectrometric research shows that the presence of defects, including those that are electrically neutral with respect to the crystal lattice, has a significant influence on the distribution of the radiation-induced electron excitations. This is evident in the electron-excitation sink in the vicinity of defects and the formation of localized excitons around impurities in ionic crystals. This influence of defects on the electron-excitation distribution is probably due to deformation of the lattice in the region of the defect. It is shown that, in the region of the defect, there is oscillating potential relief, the presence of which leads to the capture of charge carriers and their localization in this region. Lattice distortion because of deformation in the region of the defect changes the mutual distribution of the ion pairs. This creates conditions for the effective conversion of electronic excitations to localized near-defect dihalide excitons, which are different from those created in an ideal lattice. | ||
| 333 | _aРежим доступа: по договору с организацией-держателем ресурса | ||
| 461 |
_tRussian Physics Journal _oScientific Journal |
||
| 463 |
_tVol. 39, iss. 1 _v[P. 1082-1092] _d1996 |
||
| 610 | 1 | _aэлектронный ресурс | |
| 610 | 1 | _aтруды учёных ТПУ | |
| 610 | 1 | _aимпульсная спектрометрия | |
| 610 | 1 | _aисследования | |
| 610 | 1 | _aдефекты | |
| 610 | 1 | _aкристаллические решетки | |
| 700 | 1 |
_aKorepanov _bV. I. _cspecialist in the field of lightning engineering _cProfessor of Tomsk Polytechnic University, Doctor of physical and mathematical sciences _f1947- _gVladimir Ivanovich _2stltpush _3(RuTPU)RU\TPU\pers\33774 |
|
| 701 | 1 |
_aLisitsyn _bV. M. _cphysicist _cRussian physicist _cProfessor of Tomsk Polytechnic University, Candidate of physical and mathematical sciences _f1939- _gViktor Mikhailovich _2stltpush _3(RuTPU)RU\TPU\pers\28330 |
|
| 701 | 1 |
_aLisitsyna _bL. A. |
|
| 801 | 2 |
_aRU _b63413507 _c20170918 _gRCR |
|
| 856 | 4 | _uhttp://dx.doi.org/10.1007/BF02436151 | |
| 942 | _cCF | ||