| 000 | 02946nlm1a2200505 4500 | ||
|---|---|---|---|
| 001 | 656017 | ||
| 005 | 20231030041410.0 | ||
| 035 | _a(RuTPU)RU\TPU\network\22362 | ||
| 090 | _a656017 | ||
| 100 | _a20171018a2016 k y0engy50 ba | ||
| 101 | 0 | _aeng | |
| 102 | _aGB | ||
| 135 | _adrcn ---uucaa | ||
| 181 | 0 | _ai | |
| 182 | 0 | _ab | |
| 200 | 1 |
_aBragg coherent x-ray diffractive imaging of a single indium phosphide nanowire _fD. Dzhigaev [et al.] |
|
| 203 |
_aText _celectronic |
||
| 300 | _aTitle screen | ||
| 320 | _a[References: 41 tit.] | ||
| 330 | _aThree-dimensional (3D) Bragg coherent x-ray diffractive imaging (CXDI) with a nanofocused beam was applied to quantitatively map the internal strain field of a single indium phosphide nanowire. The quantitative values of the strain were obtained by pre-characterization of the beam profile with transmission ptychography on a test sample. Our measurements revealed the 3D strain distribution in a region of 150 nm below the catalyst Au particle. We observed a slight gradient of the strain in the range of ±0.6% along the [111] growth direction of the nanowire. We also determined the spatial resolution in our measurements to be about 10 nm in the direction perpendicular to the facets of the nanowire. The CXDI measurements were compared with the finite element method simulations and show a good agreement with our experimental results. The proposed approach can become an effective tool for in operando studies of the nanowires. | ||
| 461 | _tJournal of Optics | ||
| 463 |
_tVol. 18, iss. 6 _v[064007, 10 p.] _d2016 |
||
| 610 | 1 | _aэлектронный ресурс | |
| 610 | 1 | _aтруды учёных ТПУ | |
| 610 | 1 | _aX-Ray | |
| 610 | 1 | _aнанопроволоки | |
| 701 | 1 |
_aDzhigaev _bD. _gDmitry |
|
| 701 | 1 |
_aShabalin _bA. _gAnatoly |
|
| 701 | 1 |
_aStankevic _bT. _gTomas |
|
| 701 | 1 |
_aLorenz _bU. _gUlf |
|
| 701 | 1 |
_aKurta _bR. P. _gRuslan |
|
| 701 | 1 |
_aSeiboth _bF. _gFrank |
|
| 701 | 1 |
_aWallentin _bJ. _gJesper |
|
| 701 | 1 |
_aSinger _bA. _gAndrej |
|
| 701 | 1 |
_aLazarev _bS. V. _cphysicist _cengineer at Tomsk Polytechnic University _f1984- _gSergey Vladimirovich _2stltpush _3(RuTPU)RU\TPU\pers\35210 |
|
| 701 | 1 |
_aYefanov _bO. M. _gOleksandr |
|
| 701 | 1 |
_aBorgstrom _bM. T. _gMagnus |
|
| 701 | 1 |
_aStrikhanov _bM. N. _gMikhail Nikolaevich |
|
| 701 | 1 |
_aSamuelson _bL. _gLars |
|
| 701 | 1 |
_aFalkenberg _bG. _gGerald |
|
| 701 | 1 |
_aSchroer _bCh. G. _gChristian |
|
| 712 | 0 | 2 |
_aНациональный исследовательский Томский политехнический университет (ТПУ) _bИнститут физики высоких технологий (ИФВТ) _bКафедра высоковольтной электрофизики и сильноточной электроники (ВЭСЭ) _h7624 _2stltpush _3(RuTPU)RU\TPU\col\22618 |
| 801 | 2 |
_aRU _b63413507 _c20171018 _gRCR |
|
| 856 | 4 | _uhttps://doi.org/10.1088/2040-8978/18/6/064007 | |
| 942 | _cCF | ||