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100 _a20171019a2017 k y0engy50 ba
101 0 _aeng
105 _ay z 100zy
135 _adrcn ---uucaa
181 0 _ai
182 0 _ab
200 1 _aProperties of Polydisperse Tin-doped Dysprosium and Indium Oxides
_fT. D. Malinovskaya [et al.]
203 _aText
_celectronic
300 _aTitle screen
320 _a[References: 10 tit.]
330 _aThe results of investigations of the complex permittivity, diffuse-reflectance, and characteristics of crystal lattices of tin-doped indium and dysprosium oxides are presented. Using the methods of spectroscopy and X-ray diffraction analysis, it is shown that doping of indium oxide with tin results in a significant increase of the components of the indium oxide complex permittivity and an appearance of the plasma resonance in its diffuse-reflectance spectra. This indicates the appearance of charge carriers with the concentration of more than 1021 cm-3 in the materials. On the other hand, doping of the dysprosium oxide with the same amount of tin has no effect on its optical and electromagnetic properties.
461 0 _0(RuTPU)RU\TPU\network\4526
_tMATEC Web of Conferences
463 _tVol. 96 : Fundamental Aspects of Rare-Earth Elements Exploration, Mining and Separation and Modern Materials Engineering (REE-2016)
_o3rd International Symposium on Fundamental Aspects, 15-18 August, 2016, Kazakhstan
_v[00010, 5 p.]
_d2017
610 1 _aэлектронный ресурс
610 1 _aтруды учёных ТПУ
610 1 _aлегирование
610 1 _aолово
610 1 _aдиэлектрическая проницаемость
610 1 _aдиффузно-отражательная способность
610 1 _aкристаллические решетки
610 1 _aоксид индия
610 1 _aспектроскопия
610 1 _aрентгеноструктурный анализ
701 1 _aMalinovskaya
_bT. D.
_gTatjyana Dmitrievna
701 1 _aSuslyaev
_bV. I.
_gValentin Ivanovich
701 1 _aZhek
_bV. V.
_gValentina Vladimirovna
701 1 _aLysak
_bI. A.
_cspecialist in the field of engineering graphics and descriptive geometry
_cAssociate Professor of Tomsk Polytechnic University, Candidate of technical sciences
_f1977-
_gIlya Aleksandrovich
_2stltpush
_3(RuTPU)RU\TPU\pers\31987
701 1 _aMelentjev
_bS. V.
_gSergey Vladimirovich
701 1 _aDorozhkin
_bK. V.
_gKirill Valerjevich
701 1 _aKorovin
_bE. Yu.
_gEvgeny Yurjevich
701 1 _aPavlov
_bS. V.
_gSergey
712 0 2 _aНациональный исследовательский Томский политехнический университет (ТПУ)
_bФизико-технический институт (ФТИ)
_bКафедра электроники и автоматики физических установок (№ 24) (ЭАФУ)
_h54
_2stltpush
_3(RuTPU)RU\TPU\col\18731
801 2 _aRU
_b63413507
_c20171019
_gRCR
856 4 _uhttps://doi.org/10.1051/matecconf/20179600010
942 _cCF