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100 _a20171027a2017 k y0engy50 ba
101 0 _aeng
_deng
102 _aGB
135 _adrcn ---uucaa
181 0 _ai
182 0 _ab
200 1 _aOptical and magnetic properties of antiaromatic porphyrinoids
_fR. R. Valiev, H. Fliegl, D. Sundholm
203 _aText
_celectronic
300 _aTitle screen
330 _aMagnetic and spectroscopic properties of a number of formally antiaromatic carbaporphyrins, carbathiaporphyrins and isophlorins with 4n ? electrons have been investigated at density functional theory and ab initio levels of theory. The calculations show that the paratropic contribution to the magnetically induced ring-current strength susceptibility and the magnetic dipole-transition moment between the ground and the lowest excited state are related. The vertical excitation energy (VEE) of the first excited state decreases with increasing ring-current strength susceptibility, whereas the VEE of the studied higher-lying excited states are almost independent of the size of the ring-current strength susceptibility. Strong antiaromatic porphyrinoids, based on the magnitude of the paratropic ring-current strength susceptibility, have small energy gaps between the highest occupied and lowest unoccupied molecular orbitals and a small VEE of the first excited state. The calculations show that only the lowest S0 > S1 transition contributes signficantly to the magnetically induced ring-current strength susceptibility of the antiaromatic porphyrinoids. The decreasing optical gap combined with a large angular momentum contribution to the magnetic transition moment from the first excited state explains why molecules III–VII are antiaromatic with very strong paratropic ring-current strength susceptibilities. The S0 > S1 transition is a magnetic dipole-allowed electronic transition that is typical for antiaromatic porphyrinoids with 4n ? electrons.
333 _aРежим доступа: по договору с организацией-держателем ресурса
461 _tPhysical Chemistry Chemical Physics
_d1999-
463 _tVol. 19, iss. 38
_v[P. 25979-25988]
_d2017
610 1 _aэлектронный ресурс
610 1 _aтруды учёных ТПУ
700 1 _aValiev
_bR. R.
_cchemist
_cAssistant of Tomsk Polytechnic University
_f1983-
_gRashid Rinatovich
_2stltpush
_3(RuTPU)RU\TPU\pers\34114
701 1 _aFliegl
_bH.
_gHeike
701 1 _aSundholm
_bD.
_gDage
712 0 2 _aНациональный исследовательский Томский политехнический университет (ТПУ)
_bИнститут физики высоких технологий (ИФВТ)
_bКафедра общей химии и химической технологии (ОХХТ)
_h7617
_2stltpush
_3(RuTPU)RU\TPU\col\21253
801 2 _aRU
_b63413507
_c20171027
_gRCR
856 4 _uhttp://dx.doi.org/10.1039/C7CP05460B
942 _cCF