| 000 | 04180nlm1a2200457 4500 | ||
|---|---|---|---|
| 001 | 657640 | ||
| 005 | 20231030041519.0 | ||
| 035 | _a(RuTPU)RU\TPU\network\24253 | ||
| 090 | _a657640 | ||
| 100 | _a20180301a2018 k y0engy50 ba | ||
| 101 | 0 | _aeng | |
| 102 | _aNL | ||
| 135 | _adrcn ---uucaa | ||
| 181 | 0 | _ai | |
| 182 | 0 | _ab | |
| 200 | 1 |
_aSimulation of defect formation, amorphization and cluster formation processes in nc-TiN/a-Si3N4 nanocomposite under Xe irradiation _fV. V. Uglov [et al.] |
|
| 203 |
_aText _celectronic |
||
| 300 | _aTitle screen | ||
| 320 | _a[References: 73 tit.] | ||
| 330 | _aThe research of defect formation and clusterization processes by means of a molecular dynamics method both in nc-TiN nanocrystals and amorphous a-Si3N4 matrix, as the constituents of nc-TiN/a-Si3N4 nanocomposite, under exposure to Xe implantation was the aim of the present study. Dependences of the clustered Xe atoms fraction on their concentration and temperature of post-irradiation annealing were analyzed. At defect formation process in nc-TiN nanocrystals, there is a size effect consisting in intensification of the radiation point defects formation with the reduction of nc-TiN nanocrystals size and concurrent predominant formation of the dangling Si- and N-bonds in a-Si3N4 matrix. Accumulation of these defects at the irradiation leads to amorphization of nc-TiN nanocrystals with the size less than 8?nm and to formation of the nanopores in a-Si3N4 matrix. The important role of the radiation defects subsystem in transport processes of implanted Xe both in TiN close-packed lattice as well as in a-Si3N4 amorphous matrix is shown. There is a much higher extent of intensity of xenon atoms clusterization processes in the amorphous matrix. The results of the simulation are compared to existing experimental data. | ||
| 333 | _aРежим доступа: по договору с организацией-держателем ресурса | ||
| 461 | _tComputational Materials Science | ||
| 463 |
_tVol. 143 _v[P. 143–156] _d2018 |
||
| 610 | 1 | _aэлектронный ресурс | |
| 610 | 1 | _aтруды учёных ТПУ | |
| 610 | 1 | _aдефекты | |
| 610 | 1 | _aаморфизация | |
| 610 | 1 | _aнанокомпозиты | |
| 610 | 1 | _aметод молекулярной динамики | |
| 701 | 1 |
_aUglov _bV. V. _cPhysicist _cLeading researcher of Tomsk Polytechnic University, Doctor of physical and mathematical sciences _f1954- _gVladimir Vasilievich _2stltpush _3(RuTPU)RU\TPU\pers\36737 |
|
| 701 | 1 |
_aSafronov _bI. V. _gIgor Vasiljevich |
|
| 701 | 1 |
_aRemnev _bG. E. _cphysicist _cProfessor of Tomsk Polytechnic University, Doctor of technical sciences _f1948- _gGennady Efimovich _2stltpush _3(RuTPU)RU\TPU\pers\31500 |
|
| 701 | 1 |
_aSaladukhin _bI. A. _gIgor A. |
|
| 701 | 1 |
_aKvasov _bN. T. _cphysicist _cleading researcher of Tomsk Polytechnic University, Doctor of physical and mathematical sciences _f1949- _gNikolay Trafimovich _2stltpush _3(RuTPU)RU\TPU\pers\36768 |
|
| 701 | 1 |
_aDorozhkin _bN. N. _gNikolay Nikolaevich |
|
| 701 | 1 |
_aShimanskii (Shymanski) _bV. I. _cPhysicist _cAssociate Scientist of Tomsk Polytechnic University, Candidate of physical and mathematical sciences _f1986- _gVitali Igorevich _2stltpush _3(RuTPU)RU\TPU\pers\36738 |
|
| 712 | 0 | 2 |
_aНациональный исследовательский Томский политехнический университет _bИсследовательская школа физики высокоэнергетических процессов _c(2017- ) _h8118 _2stltpush _3(RuTPU)RU\TPU\col\23551 |
| 712 | 0 | 2 |
_aНациональный исследовательский Томский политехнический университет _bИнженерная школа новых производственных технологий _bНаучно-производственная лаборатория "Импульсно-пучковых, электроразрядных и плазменных технологий" _h7882 _2stltpush _3(RuTPU)RU\TPU\col\23502 |
| 801 | 2 |
_aRU _b63413507 _c20191212 _gRCR |
|
| 856 | 4 | _uhttps://doi.org/10.1016/j.commatsci.2017.10.046 | |
| 942 | _cCF | ||