| 000 | 03379nlm1a2200409 4500 | ||
|---|---|---|---|
| 001 | 658022 | ||
| 005 | 20231030041535.0 | ||
| 035 | _a(RuTPU)RU\TPU\network\25053 | ||
| 090 | _a658022 | ||
| 100 | _a20180510a2018 k y0engy50 ba | ||
| 101 | 0 | _aeng | |
| 102 | _aUS | ||
| 135 | _adrnn ---uucaa | ||
| 181 | 0 | _ai | |
| 182 | 0 | _ab | |
| 200 | 1 |
_aInfluence of Peaking Capacitance on the Output Power of Capacitive-Discharge-Pumped Metal Halide Vapor Lasers _fD. V. Shiyanov, V. B. Sukhanov, F. A. Gubarev |
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| 203 |
_aText _celectronic |
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| 300 | _aTitle screen | ||
| 320 | _a[References: 40 tit.] | ||
| 330 | _aThis paper presents the study of the energy characteristics of CuBr and CuCl lasers pumped by a longitudinal capacitive discharge. It is shown that with the peaking capacitor connected to the electrodes of a gas-discharge tube of capacitive-discharge-pumped metal halide vapor laser, the lasing power can significantly increase. The optimum value of peaking capacitance varies from 25% to 60% of the value of the capacitive electrodes serial connection. The introduction of HBr additive into the active volume significantly improves laser performance and requires greater peaking capacitance than operation without active additive. The most increase in the output power corresponds to small diameter tubes and amounts 50%, in tubes of large diameter an increase amounts 20%-40%. Currently, the maximum average lasing power of 15 W has been achieved for the capacitive-discharge-pumped metal vapor laser. | ||
| 333 | _aРежим доступа: по договору с организацией-держателем ресурса | ||
| 461 | _tIEEE Journal of Quantum Electronics | ||
| 463 |
_tVol. 54, iss. 2 _v[1500107, 7 p.] _d2018 |
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| 610 | 1 | _aэлектронный ресурс | |
| 610 | 1 | _aтруды учёных ТПУ | |
| 610 | 1 | _aразрядка | |
| 610 | 1 | _aбарьеры | |
| 610 | 1 | _aемкостная размерность | |
| 610 | 1 | _aбромиды | |
| 700 | 1 |
_aShiyanov _bD. V. _cspecialist in the field of electronics _cEngineer of Tomsk Polytechnic University _f1973- _gDmitry Valeryevich _2stltpush _3(RuTPU)RU\TPU\pers\31659 |
|
| 701 | 1 |
_aSukhanov _bV. B. _cspecialist in the field of electronics _cEngineer of Tomsk Polytechnic University _f1945- _gViktor Borisovich _2stltpush _3(RuTPU)RU\TPU\pers\31658 |
|
| 701 | 1 |
_aGubarev _bF. A. _cspecialist in the field of electronics _cAssociate Professor of Tomsk Polytechnic University, Candidate of physical and mathematical sciences _f1979- _gFedor Aleksandrovich _2stltpush _3(RuTPU)RU\TPU\pers\31657 |
|
| 712 | 0 | 2 |
_aНациональный исследовательский Томский политехнический университет _bИнженерная школа неразрушающего контроля и безопасности _bОтделение электронной инженерии _h7977 _2stltpush _3(RuTPU)RU\TPU\col\23507 |
| 712 | 0 | 2 |
_aНациональный исследовательский Томский политехнический университет _bИсследовательская школа химических и биомедицинских технологий (ИШХБМТ) _c(2017- ) _h8120 _2stltpush _3(RuTPU)RU\TPU\col\23537 |
| 801 | 2 |
_aRU _b63413507 _c20180510 _gRCR |
|
| 856 | 4 | _uhttps://doi.org/10.1109/JQE.2018.2806943 | |
| 942 | _cCF | ||