| 000 | 03013nlm1a2200409 4500 | ||
|---|---|---|---|
| 001 | 658079 | ||
| 005 | 20231030041537.0 | ||
| 035 | _a(RuTPU)RU\TPU\network\25152 | ||
| 090 | _a658079 | ||
| 100 | _a20180515a2017 k y0engy50 ba | ||
| 101 | 0 | _aeng | |
| 135 | _aarnn ---uucaa | ||
| 181 | 0 | _ai | |
| 182 | 0 | _ab | |
| 200 | 1 |
_aFine features of parametric X-ray radiation by relativistic electrons and ions _fK. B. Korotchenko, Yu. L. Eykhorn, S. B. Dabagov |
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| 203 |
_aText _celectronic |
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| 300 | _aTitle screen | ||
| 320 | _a[References.: 28 tit.] | ||
| 330 | _aIn present work within the frame of dynamic theory for parametric X-ray radiation in two-beam approximation we have presented detailed studies on parametric radiation emitted by relativistic both electrons and ions at channeling in crystals that is highly requested at planned experiments. The analysis done has shown that the intensity of radiation at relativistic electron channeling in Si (110) with respect to the conventional parametric radiation intensity has up to 5% uncertainty, while the error of approximate formulas for calculating parametric X-ray radiation maxima does not exceed 1.2%. We have demonstrated that simple expressions for the Fourier components of Si crystal susceptibility χ0 and χgσ could be reduced, as well as the temperature dependence for radiation maxima in Si crystal (diffraction plane (110)) within Debye model. Moreover, for any types of channeled ions it is shown that the parametric X-ray radiation intensity is proportional to z2−b(Z,z)/z with the function b(Z,z) depending on the screening parameter and the ion charge number z=Z−Ze. | ||
| 461 | _tPhysics Letters B | ||
| 463 |
_tVol. 774 _v[P. 470-475] _d2017 |
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| 610 | 1 | _aэлектронный ресурс | |
| 610 | 1 | _aтруды учёных ТПУ | |
| 610 | 1 | _aпараметрическое излучение | |
| 610 | 1 | _aрентгеновское излучение | |
| 610 | 1 | _aзонная структура | |
| 610 | 1 | _aпоперечные структуры | |
| 610 | 1 | _aэнергетические уровни | |
| 610 | 1 | _aкристаллы | |
| 610 | 1 | _aканалирование | |
| 700 | 1 |
_aKorotchenko _bK. B. _cphysicis _cProfessor of Tomsk Polytechnic University, doctor of physical and mathematical Sciences _f1949- _gKonstantin Borisovich _2stltpush _3(RuTPU)RU\TPU\pers\31536 |
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| 701 | 1 |
_aEykhorn _bYu. L. _cphysicist _cassistant at Tomsk Polytechnic University _f1991- _gYury Leonidovich _2stltpush _3(RuTPU)RU\TPU\pers\35247 |
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| 701 | 1 |
_aDabagov _bS. B. _gSultan Barasbievich |
|
| 712 | 0 | 2 |
_aНациональный исследовательский Томский политехнический университет _bИсследовательская школа физики высокоэнергетических процессов _c(2017- ) _h8118 _2stltpush _3(RuTPU)RU\TPU\col\23551 |
| 801 | 2 |
_aRU _b63413507 _c20180515 _gRCR |
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| 856 | 4 | _uhttps://doi.org/10.1016/j.physletb.2017.09.088 | |
| 942 | _cCF | ||