| 000 | 04310nlm1a2200541 4500 | ||
|---|---|---|---|
| 001 | 658132 | ||
| 005 | 20231030041539.0 | ||
| 035 | _a(RuTPU)RU\TPU\network\25253 | ||
| 090 | _a658132 | ||
| 100 | _a20180522a2018 k y0engy50 ba | ||
| 101 | 0 | _aeng | |
| 102 | _aNL | ||
| 135 | _adrcn ---uucaa | ||
| 181 | 0 | _ai | |
| 182 | 0 | _ab | |
| 200 | 1 |
_aSize effect in AlN/SiN multilayered films irradiated with helium and argon ions _fV. V. Uglov [et al.] |
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| 203 |
_aText _celectronic |
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| 300 | _aTitle screen | ||
| 320 | _a[References: 15 tit.] | ||
| 330 | _aThe results of microstructure and phase composition of the AlN/SiNx multilayered films after the irradiation with helium and argon ions are presented. The multilayered films with alternating nanocrystalline (nc-AlN) and amorphous (a-SiNx) phases with thicknesses from 2 to 10?nm were obtained by reactive magnetron sputtering. X-ray diffraction results showed the dependence of the crystal lattice parameters of the nc-AlN phase on the thickness which is explained by size affect. After the irradiation with helium (30?keV) and argon (180?keV) ions the radiation-induced point defects as well as their clusters are produced in the films and mainly localized in the amorphous a-SiNx layers. It is of the consequence of enhanced implanted ions migration towards the a-SiNx layers and bubbles formation, as revealed by high-resolution transmission electron microscopy. The average size of the bubbles is 2.0–2.4?nm and grows up to 4–5?nm after the post-irradiation vacuum (800?°C) annealing. The amorphous a-SiNx layers are believed to serve as sinks for radiation-induced defects. | ||
| 333 | _aРежим доступа: по договору с организацией-держателем ресурса | ||
| 461 | _tNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | ||
| 463 |
_tVol. 435 _v[8 p.] _d2018 |
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| 610 | 1 | _aэлектронный ресурс | |
| 610 | 1 | _aтруды учёных ТПУ | |
| 610 | 1 | _aмногослойные пленки | |
| 610 | 1 | _aнитрид алюминия | |
| 610 | 1 | _aионы гелия | |
| 610 | 1 | _aионы аргона | |
| 610 | 1 | _aимплантация | |
| 610 | 1 | _aаморфные слои | |
| 610 | 1 | _aрадиационные дефекты | |
| 610 | 1 | _aпузыри | |
| 610 | 1 | _aотжиг | |
| 701 | 1 |
_aUglov _bV. V. _cPhysicist _cLeading researcher of Tomsk Polytechnic University, Doctor of physical and mathematical sciences _f1954- _gVladimir Vasilievich _2stltpush _3(RuTPU)RU\TPU\pers\36737 |
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| 701 | 1 |
_aKvasov _bN. T. _cphysicist _cleading researcher of Tomsk Polytechnic University, Doctor of physical and mathematical sciences _f1949- _gNikolay Trafimovich _2stltpush _3(RuTPU)RU\TPU\pers\36768 |
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| 701 | 1 |
_aRemnev _bG. E. _cphysicist _cProfessor of Tomsk Polytechnic University, Doctor of technical sciences _f1948- _gGennady Efimovich _2stltpush _3(RuTPU)RU\TPU\pers\31500 |
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| 701 | 1 |
_aShimanskii _bV. I. _cPhysicist _cAssociate Scientist of Tomsk Polytechnic University, Candidate of physical and mathematical sciences _f1986- _gVitali Igorevich _2stltpush _3(RuTPU)RU\TPU\pers\36738 |
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| 701 | 1 |
_aKorenevsky _bE. L. _gEgor Leonidovich |
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| 701 | 1 |
_aZlotsky _bS. V. _gSergey Vladimirovich |
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| 701 | 1 |
_aAbadias _bG. _gGregory |
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| 701 | 1 |
_aO'Connell _bJ. H. _gJacques Herman |
|
| 701 | 1 |
_avan Vuuren _bA. J. _gArno Janse |
|
| 712 | 0 | 2 |
_aНациональный исследовательский Томский политехнический университет _bИсследовательская школа физики высокоэнергетических процессов _c(2017- ) _h8118 _2stltpush _3(RuTPU)RU\TPU\col\23551 |
| 712 | 0 | 2 |
_aНациональный исследовательский Томский политехнический университет _bИнженерная школа новых производственных технологий _bНаучно-производственная лаборатория "Импульсно-пучковых, электроразрядных и плазменных технологий" _h7882 _2stltpush _3(RuTPU)RU\TPU\col\23502 |
| 801 | 2 |
_aRU _b63413507 _c20190409 _gRCR |
|
| 856 | 4 | _uhttps://doi.org/10.1016/j.nimb.2018.01.012 | |
| 942 | _cCF | ||