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090			_a658368
100			_a20181009a2018 k y0engy50 ba
101	0		_aeng
102			_aNL
135			_adrcn ---uucaa
181		0	_ai
182		0	_ab
200	1		_aBent crystal channeling of 255 MeV electrons _fY. Takabayashi, Yu. L. Pivovarov, T. A. Tukhfatullin
203			_aText _celectronic
300			_aTitle screen
320			_aReferences: p. 156 (27 tit.)
330			_aCharged particles channeled in a bent crystal plane are known to be deflected along the bent plane. Such studies have mainly been performed for high-energy positively-charged particles such as protons, and recently for electrons with energies from 855 MeV to 20.35 GeV. In this work, we present experimental results on the bent crystal channeling of electrons for a lower energy region (255 MeV), where the multiple scattering effect in a crystal is expected to be more dominant. Angular distributions of electrons transmitted through a bent Si crystal have been measured, which are in good agreement with the simulation results.
333			_aРежим доступа: по договору с организацией-держателем ресурса
461			_tPhysics Letters A
463			_tVol. 382, iss. 4 _v[P. 153-156] _d2018
610	1		_aэлектронный ресурс
610	1		_aтруды учёных ТПУ
610	1		_aкристаллы
610	1		_aканалы
610	1		_aизгиб
610	1		_aотклонения
610	1		_aлучи
700		1	_aTakabayashi _bY. _gYuichi
701		1	_aPivovarov _bYu. L. _cphysicist _cprofessor of Tomsk Polytechnic University _f1953- _gYuriy Leonidovich _2stltpush _3(RuTPU)RU\TPU\pers\31522
701		1	_aTukhfatullin _bT. A. _cphysicist _cAssociate Professor of Tomsk Polytechnic University, Candidate of physical and mathematical sciences _f1971- _gTimur Ahatovich _2stltpush _3(RuTPU)RU\TPU\pers\33633
712	0	2	_aНациональный исследовательский Томский политехнический университет _bШкола базовой инженерной подготовки _bОтделение естественных наук _h8032 _2stltpush _3(RuTPU)RU\TPU\col\23562
801		2	_aRU _b63413507 _c20181009 _gRCR
856	4		_uhttps://doi.org/10.1016/j.physleta.2017.11.015
942			_cCF