| 000 | 03735nlm1a2200433 4500 | ||
|---|---|---|---|
| 001 | 658549 | ||
| 005 | 20231030041556.0 | ||
| 035 | _a(RuTPU)RU\TPU\network\26455 | ||
| 090 | _a658549 | ||
| 100 | _a20181022a2018 k y0engy50 ba | ||
| 101 | 0 | _aeng | |
| 135 | _adrcn ---uucaa | ||
| 181 | 0 | _ai | |
| 182 | 0 | _ab | |
| 200 | 1 |
_aInfluence of deposition conditions on mechanical properties of a-C:H:SiOx films prepared by plasma-assisted chemical vapor deposition method _fA. S. Grenaderov [et al.] |
|
| 203 |
_aText _celectronic |
||
| 300 | _aTitle screen | ||
| 320 | _a[References: 37 tit.] | ||
| 330 | _aA series of a-C:H:SiOx films was deposited on polished silicon and glass substrates by plasma-assisted chemical vapor deposition combined with pulsed bipolar substrate bias from mixtures of argon and polyphenylmethylsiloxane vapors. Different Ar pressures and substrate bias voltages were applied for the synthesis of a-C:H:SiOx films having different mechanical properties. Detailed characterization of the mechanical properties of a-C:H:SiOx films was made using the nanoindentation. Hardness and elastic modulus were used for the evaluation of the endurance capability (H/E) and resistance to plastic deformation (H3/E2). The structural properties of the deposited films were analyzed by Fourier transform infrared spectroscopy (FTIR) and Raman spectroscopy. It was shown that the Ar pressure and substrate bias variation can change the film properties and the growth rate and these changes are not linear. So, depending upon application, deposition conditions are to be optimized. In all of the examined coatings, increase of Ar pressure and amplitude of negative pulse of substrate bias lead to improvement in mechanical properties. According to the results of FTIR and Raman spectroscopy; this improvement is due to an increase in the sp3 bonded carbon content and decrease of hydrogen content in the films. | ||
| 333 | _aРежим доступа: по договору с организацией-держателем ресурса | ||
| 461 | _tSurface and Coatings Technology | ||
| 463 |
_tVol. 349 _v[P. 547-555] _d2018 |
||
| 610 | 1 | _aэлектронный ресурс | |
| 610 | 1 | _aтруды учёных ТПУ | |
| 610 | 1 | _aa-C:H:SiOx films | |
| 610 | 1 | _aPlasma CVD | |
| 610 | 1 | _aспектроскопия | |
| 610 | 1 |
_aсмещение _aFTIR spectroscopy |
|
| 610 | 1 | _aсмещение | |
| 610 | 1 | _aSubstrate bias | |
| 701 | 1 |
_aGrenaderov _bA. S. _gAleksandr Sergeevich |
|
| 701 | 1 |
_aSoloviev _bA. A. _cspecialist in the field of hydrogen energy _cAssociate Professor of Tomsk Polytechnic University, Candidate of technical sciences _f1977- _gAndrey Aleksandrovich _2stltpush _3(RuTPU)RU\TPU\pers\30863 |
|
| 701 | 1 |
_aOskomov _bK. V. _gKonstantin Vladimirovich |
|
| 701 | 1 |
_aSypchenko _bV. S. _cphysicist _cAssociate Scientist of Tomsk Polytechnic University, assistant _f1987- _gVladimir Sergeevich _2stltpush _3(RuTPU)RU\TPU\pers\33791 |
|
| 712 | 0 | 2 |
_aНациональный исследовательский Томский политехнический университет _bИнженерная школа ядерных технологий _bНаучно-образовательный центр Б. П. Вейнберга _h7866 _2stltpush _3(RuTPU)RU\TPU\col\23561 |
| 712 | 0 | 2 |
_aНациональный исследовательский Томский политехнический университет _bИнженерная школа ядерных технологий _bОтделение экспериментальной физики _h7865 _2stltpush _3(RuTPU)RU\TPU\col\23549 |
| 801 | 2 |
_aRU _b63413507 _c20181022 _gRCR |
|
| 856 | 4 | _uhttps://doi.org/10.1016/j.surfcoat.2018.06.019 | |
| 942 | _cCF | ||