| 000 | 03751nlm1a2200481 4500 | ||
|---|---|---|---|
| 001 | 658620 | ||
| 005 | 20231030041559.0 | ||
| 035 | _a(RuTPU)RU\TPU\network\26572 | ||
| 090 | _a658620 | ||
| 100 | _a20181026a2018 k y0engy50 ba | ||
| 101 | 0 | _aeng | |
| 102 | _aNL | ||
| 135 | _adrcn ---uucaa | ||
| 181 | 0 | _ai | |
| 182 | 0 | _ab | |
| 200 | 1 |
_aIon processing of alumina ceramics by high-power pulsed beams _fS. A. Gyngazov (Ghyngazov) [et al.] |
|
| 203 |
_aText _celectronic |
||
| 300 | _aTitle screen | ||
| 320 | _a[References: 30 tit.] | ||
| 330 | _aThe modification effects of the subsurface layers of alumina ceramics under irradiation by high-power carbon beam are investigated. Irradiation was performed on TEMP ion beam accelerator at a residual pressure of 10?4?Torr. The energy of accelerated ions was 200?keV. The current density per pulse varied within 15–85?A/cm2. Mechanical properties and phase composition in subsurface ceramics layers before and after irradiation were analyzed by microhardness testing and X-ray diffraction, respectively. No changes in the ceramics phase composition were observed. It was found that the treatment of ceramics with a powerful pulsed ion beam leads to a significant change in the microhardness of subsurface layers. The increase in microhardness depends on the current density and the deposited energy. The greatest increase in microhardness (up to 2.5 times) is observed at a current density of 50?A/cm2. | ||
| 333 | _aРежим доступа: по договору с организацией-держателем ресурса | ||
| 461 | _tNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | ||
| 463 |
_tVol. 434 _v[Р. 120-123] _d2018 |
||
| 610 | 1 | _aэлектронный ресурс | |
| 610 | 1 | _aтруды учёных ТПУ | |
| 610 | 1 | _aalumina ceramics | |
| 610 | 1 | _ahigh-power beam | |
| 610 | 1 | _acarbon ions | |
| 610 | 1 | _amicrohardness | |
| 610 | 1 | _aмикротвердость | |
| 610 | 1 | _aионы | |
| 610 | 1 | _aуглерод | |
| 610 | 1 | _aкерамика | |
| 610 | 1 | _aглиноземы | |
| 701 | 1 |
_aGyngazov (Ghyngazov) _bS. A. _cspecialist in the field of electronics _cLeading researcher of Tomsk Polytechnic University, Doctor of technical sciences _f1958- _gSergey Anatolievich _2stltpush _3(RuTPU)RU\TPU\pers\33279 |
|
| 701 | 1 |
_aPavlov _bS. K. _cphysicist _cEngineer of Tomsk Polytechnic University _f1990- _gSergey Konstantinovich _2stltpush _3(RuTPU)RU\TPU\pers\32875 |
|
| 701 | 1 |
_aKostenko _bV. _claboratoryassistantresearcher of Tomsk Polytechnic University _f1994- _gValeriya _2stltpush _3(RuTPU)RU\TPU\pers\42079 |
|
| 701 | 1 |
_aSurzhikov _bA. P. _cphysicist _cProfessor of Tomsk Polytechnic University, doctor of physical and mathematical sciences (DSc) _f1951- _gAnatoly Petrovich _2stltpush _3(RuTPU)RU\TPU\pers\30237 |
|
| 712 | 0 | 2 |
_aНациональный исследовательский Томский политехнический университет (ТПУ) _bИнститут неразрушающего контроля (ИНК) _bПроблемная научно-исследовательская лаборатория электроники, диэлектриков и полупроводников (ПНИЛ ЭДиП) _h194 _2stltpush _3(RuTPU)RU\TPU\col\19033 |
| 712 | 0 | 2 |
_aНациональный исследовательский Томский политехнический университет _bИсследовательская школа физики высокоэнергетических процессов _c(2017- ) _h8118 _2stltpush _3(RuTPU)RU\TPU\col\23551 |
| 801 | 2 |
_aRU _b63413507 _c20181026 _gRCR |
|
| 856 | 4 | _uhttps://doi.org/10.1016/j.nimb.2018.08.037 | |
| 942 | _cCF | ||