| 000 | 02601nlm1a2200361 4500 | ||
|---|---|---|---|
| 001 | 658685 | ||
| 005 | 20231030041602.0 | ||
| 035 | _a(RuTPU)RU\TPU\network\26648 | ||
| 090 | _a658685 | ||
| 100 | _a20181031a2018 k y0engy50 ba | ||
| 101 | 0 | _aeng | |
| 135 | _adrcn ---uucaa | ||
| 181 | 0 | _ai | |
| 182 | 0 | _ab | |
| 200 | 1 |
_aTunneling current in w-GaN/AlN(0001) structures with deep-level defects _fA. N. Razzhuvalov, S. N. Grinyaev |
|
| 203 |
_aText _celectronic |
||
| 300 | _aTitle screen | ||
| 320 | _a[References: p. 630 (24 tit.)] | ||
| 330 | _aThe influence of the interface deep-level defects on the tunneling current of a double-barrier w-AlN/GaN (0001) structure is studied. It is shown that the peculiarities of the current essentially depend on the positions of deep-levels, concentrations and spatial distribution of defects. At high concentrations of defects comparable to those of polarization charge, partial compensation of polarization charges near the contacts of the structure occurs and a resonance level in the triangular well can arise. Defective structures can possess a huge peak-to-valley ratio higher than 100 due to the small value of the valley current. The results of the simulations are consistent with some experimental dependences of the tunneling current in double-barrier structures. | ||
| 333 | _aРежим доступа: по договору с организацией-держателем ресурса | ||
| 461 |
_tSuperlattices and Microstructures _oScientific Journal |
||
| 463 |
_tVol. 122 _v[P. 624-630] _d2018 |
||
| 610 | 1 | _aэлектронный ресурс | |
| 610 | 1 | _aтруды учёных ТПУ | |
| 610 | 1 | _aнитриды | |
| 610 | 1 | _aтуннелирование | |
| 610 | 1 | _aдефекты | |
| 700 | 1 |
_aRazzhuvalov _bA. N. _cphysicist _cassociate Professor of Tomsk Polytechnic University, candidate of physico-mathematical Sciences _f1976- _gAlexander Nikolaevich _2stltpush _3(RuTPU)RU\TPU\pers\36680 |
|
| 701 | 1 |
_aGrinyaev _bS. N. _cphysicist _cAssociate Professor of Tomsk Polytechnic University, Candidate of physical and mathematical science _f1951- _gSergey Nikolaevich _2stltpush _3(RuTPU)RU\TPU\pers\32574 |
|
| 712 | 0 | 2 |
_aНациональный исследовательский Томский политехнический университет _bИсследовательская школа физики высокоэнергетических процессов _c(2017- ) _h8118 _2stltpush _3(RuTPU)RU\TPU\col\23551 |
| 801 | 2 |
_aRU _b63413507 _c20181031 _gRCR |
|
| 856 | 4 | _uhttps://doi.org/10.1016/j.spmi.2018.06.034 | |
| 942 | _cCF | ||